IRG4PSC71UD

Manufacturer Part NumberIRG4PSC71UD
DescriptionInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
ManufacturerInternational Rectifier
IRG4PSC71UD datasheet
 
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft
recovery anti-parallel diodes for use in bridge
configurations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs
• Cost and space saving in designs that require
multiple, paralleled IGBTs
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
I
Pulsed Collector Current
CM
I
Clamped Inductive Load Current
LM
I
@ T
= 100°C
Diode Continuous Forward Current
F
C
I
Diode Maximum Forward Current
FM
V
Gate-to-Emitter Voltage
GE
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 sec.
Thermal Resistance\ Mechanical
Parameter
R
Junction-to-Case - IGBT
JC
R
Junction-to-Case - Diode
JC
R
Case-to-Sink, flat, greased surface
CS
R
Junction-to-Ambient, typical socket mount
JA
Recommended Clip Force
Weight
www.irf.com
PD - 91682A
IRG4PSC71UD
UltraFast CoPack IGBT
C
V
CES
V
CE(on) typ.
G
@V
= 15V, I
GE
E
n-cha n ne l
SUPER - 247
Max.
600
85
60
200
200
60
350
± 20
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Min.
Typ.
Max.
–––
–––
0.36
–––
–––
0.69
–––
0.24
–––
–––
20.0(2.0)
–––
–––
6 (0.21)
= 600V
= 1.67V
= 60A
C
Units
V
A
V
W
°C
Units
°C/W
–––
38
–––
N (kgf)
–––
g (oz)
1
5/12/99

IRG4PSC71UD Summary of contents

  • Page 1

    ... Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Recommended Clip Force Weight www.irf.com PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT C V CES V CE(on) typ 15V n-cha SUPER - 247 Max. 600 ...

  • Page 2

    ... IRG4PSC71UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES ...

  • Page 3

    ... Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 ° 15V 1 3.0 3.5 5 Fig Typical Transfer Characteristics IRG4PSC71UD oth: D uty 5° °C sink riv ified ipation = ° ...

  • Page 4

    ... IRG4PSC71UD LIM ITE (° Fig Maximum Collector Current vs. Temperature 0.50 0.1 0.20 0.10 0.05 0. ...

  • Page 5

    ... Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 15V 480V -60 -40 -20 Fig Typical Switching Losses vs. IRG4PSC71UD 100 200 300 Q , Total Gate Charge (nC 5.0Ohm 5 120 100 120 140 160 ° ...

  • Page 6

    ... IRG4PSC71UD 5.0Ohm 150 C ° 480V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 V GE ...

  • Page 7

    ... ° ° 30A /dt Fig Typical di f IRG4PSC71UD I = 30A 60A 120A F 1000 /µ / 120A 60A /µ ...

  • Page 8

    ... IRG4PSC71UD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d( td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ...

  • Page 9

    ... Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current IRG4PSC71UD Test Circuit 480V @25°C C Test Circuit 9 ...

  • Page 10

    ... IRG4PSC71UD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction GE temperature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot Current limited by the package, (Die current = 100A) Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St ...