IRGP20B60PD International Rectifier, IRGP20B60PD Datasheet

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IRGP20B60PD

Manufacturer Part Number
IRGP20B60PD
Description
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Manufacturer
International Rectifier
Datasheet

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1
Applications
Features
Benefits
Absolute Maximum Ratings
V
I
I
I
I
I
I
I
V
P
P
T
T
Thermal Resistance
R
R
R
R
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
CM
LM
F
F
FRM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
@ T
@ T
@ T
@ T
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
NPT Technology, Positive Temperature Coefficient
Lower V
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE
(SAT)
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Parameter
Parameter
d
e
SMPS IGBT
G
n-channel
E
C
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
–––
10 lbf·in (1.1 N·m)
IRGP20B60PD
-55 to +150
6 (0.21)
I
Max.
D
Typ.
0.24
±20
600
220
–––
–––
–––
40
22
80
80
31
12
42
86
@ V
Equivalent MOSFET
R
(FET equivalent) = 20A
V
CE(on)
CE(on)
Parameters
GE
V
CES
= 15V I
typ. = 158mΩ
Max.
typ. = 2.05V
0.58
–––
–––
2.5
40
TO-247AC
= 600V
C
www.irf.com
= 13.0A
G

C
Units
Units
g (oz)
°C/W
E
02/06/03
°C
W
V
A
V

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IRGP20B60PD Summary of contents

Page 1

... Thermal Resistance Junction-to-Case-(each Diode) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS Thermal Resistance, Junction-to-Ambient (typical socket mount) R θJA Weight 1 SMPS IGBT n-channel Parameter d e Parameter IRGP20B60PD V = 600V CES V typ. = 2.05V CE(on 15V I = 13. Equivalent MOSFET Parameters  R typ. = 158mΩ CE(on) I ...

Page 2

... IRGP20B60PD Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J R Internal Gate Resistance G V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance ...

Page 3

... Fig Typ. IGBT Output Characteristics IRGP20B60PD 100 120 140 160 T C (°C) Fig Power Dissipation vs. Case Temperature 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6. (V) Fig ...

Page 4

... IRGP20B60PD 450 400 350 25°C 300 125°C 250 200 150 100 (V) Fig Typ. Transfer Characteristics V = 50V 10µ (V) Fig Typical 125°C J 350 300 ...

Page 5

... CE 1.6 1.5 400V 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0 Fig Normalized Typical V GE IRGP20B60PD td OFF Ω ) Fig Typ. Switching Time vs 390V 13A Diode clamp used: 8ETH06 (See C.T.3) Cies Coes Cres 100 V CE (V) Fig ...

Page 6

... IRGP20B60PD 200V 125° 25° 100 di /dt - (A/µs) f 500 V = 200V 125° 25°C J 400 I = 16A 8. 4.0A F 300 200 100 0 100 di /dt - (A/µ 200V I = 16A 125° 8. 25° ...

Page 7

... C J τ τ 1 τ 2 τ Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0.0001 0.001 0. Rectangular Pulse Duration (sec) IRGP20B60PD τi (sec (°C/ 0.12003 0.000034 τ C τ 0.05001 0.000034 τ 4 τ 4 0.23292 0.000970 0.17719 0.011265 ...

Page 8

... IRGP20B60PD 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) L PFC diode DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit 8 L VCC 80 V DUT Fig.C.T.2 - RBSOA Circuit VCC REVERSE RECOVERY CIRCUIT V = 200V R 0.01 Ω 70µH D.U.T. D dif/dt ADJUST IRFP250 G S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit L DUT ...

Page 9

... I 0.5 RRM di(rec)M/dt 0.75 I RRM di / RRM rr (rec)M b RRM Fig. WF3 - Reverse Recovery Waveform and Definitions IRGP20B60PD 45 40 TEST CURRENT 90% test current 20 10% test current Eon Loss -5 7.85 7.95 8.05 8.15 Time (µ 125°C using Fig. CT.3 ...

Page 10

... IRGP20B60PD Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) * 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X I‚‡r†)ÃUuv†Ãƒh…‡Ã€h…xvtÃvs‚…€h‡v‚Ãhƒƒyvr†Ã‡‚Ãqr‰vpr†Ãƒ…‚qˆprqÃirs‚…rÃ!!%! Â…Ãs‚… ...

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