IXFH 23N60Q IXYS Corporation, IXFH 23N60Q Datasheet
IXFH 23N60Q
Manufacturer Part Number
IXFH 23N60Q
Description
TRANS MOSFET N-CH 600V 23A 3TO-247 AD
Manufacturer
IXYS Corporation
Datasheet
1.IXFH_23N60Q.pdf
(4 pages)
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
© 2003 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
C
J
J
J
GS
DS
DS
GS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
= 250 µA
D
= 4 mA
, V
= 0.5 I
G
= 2 Ω
DS
= 0
D25
TO-247 AD
TO-268
GS
= 1 MΩ
DD
T
T
≤ V
J
J
= 125°C
= 25°C
DSS
JM
,
IXFH 23N60Q
IXFT 23N60Q
600
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
600
600
±30
±40
400
150
300
1.5
23
92
23
30
15
6
4
±100
0.32
Max.
4.5
25
1
V/ns
mA
mJ
nA
°C
°C
°C
°C
µA
W
Ω
V
V
A
A
A
V
V
V
g
g
V
J
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G = Gate
S = Source
Features
Advantages
process
IXYS advanced low gate charge
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
V
Easy to mount
Space savings
High power density
R
t
I
rr
D25
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 250ns
DS (on)
G
=
=
=
D = Drain
TAB = Drain
S
0.32 Ω Ω Ω Ω Ω
600 V
DS99055(06/03)
23 A
(TAB)
(TAB)
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IXFH 23N60Q Summary of contents
Page 1
... DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFH 23N60Q IXFT 23N60Q Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ DSS 400 -55 ...
Page 2
... J min. typ. max. JM 250 = 100 V 0. 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXFH 23N60Q IXFT 23N60Q TO-247 AD Outline Terminals Gate ...
Page 3
... D © 2003 IXYS All rights reserved D25 25º 25º IXFH 23N60Q IXFT 23N60Q Fig. 2. Extended Output Characteristics @ 25 deg ...
Page 4
... U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXFH 23N60Q IXFT 23N60Q Fig. 8. Transconductance -40ºC J 25º 25º ...