IXFH76N06 IXYS Corporation, IXFH76N06 Datasheet

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IXFH76N06

Manufacturer Part Number
IXFH76N06
Description
HiPerFET Power MOSFETs - N-Channel Enhancement Mode, High dv/dt, Low trr, HDMOSTM Family
Manufacturer
IXYS Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH76N06-11
Manufacturer:
IXYS
Quantity:
35 500
Part Number:
IXFH76N06-11
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFH76N06-12
Manufacturer:
IXYS
Quantity:
35 500
Preliminary Data
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
V
I
I
R
©1996 IXYS Corporation. All rights reserved.
I
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
XYS reserves the right to change limits, test conditions, and dimensions.
AR
DSS
D25
D119
DM
GSS
J
JM
stg
DSS
DGR
GSM
AR
AS
D
DSS
GS(th)
GS
DS(on)
d
T
T
J
J
V
V
GS
DS
Test Conditions
= 25 C to 175 C
= 25 C to 175 C; R
Continuous
Transient
T
T
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
Pulse test, t
S
V
C
C
C
C
C
J
C
GS
DS
GS
= 0 V, I
= V
GS
= 25 C (Chip capability = 125 A)
= 119 C, limited by external leads
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 20 V
= 0.8 V
= 0 V
= 10 V, I
150 C, R
Fax: 408-496-0670
GS
I
DM
TM
, I
, di/dt
rr
D
D
, HDMOS
= 250 A
= 250 A
DSS
DC
D
G
, V
300 s, duty cycle
= 40 A
= 2
100 A/ s, V
DS
GS
= 0
= 10 k
TM
Family
DD
T
T
76 N06, 76 N07-11
76 N07-12
(T
J
J
= 25 C
= 125 C
J
V
= 25 C, unless otherwise specified)
DSS
N07
N06
JM
,
2 %
N07
N06
N07
N06
min.
2.0
70
60
Characteristic Values
IXFH 76N06
IXFH 76N07-11
IXFH 76N07-12
-55 ... +175
-55 ... +150
Maximum Ratings
typ.
1.15/10 Nm/lb.in.
IXFH 76N06
300
304
100
360
175
70
60
70
60
20
30
76
30
76
2
5
6
max.
3.4
100
100
500
11
12
V/ns
m
m
mJ
V
V
V
nA
W
V
V
A
A
A
A
J
g
V
V
V
V
C
C
C
C
A
A
60 V
70 V
70 V
V
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Features
Applications
Advantages
DSS
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
IXFH 76N07-11
IXFH 76N07-12
DS (on)
76 A
76 A
76 A
TO-247 AD
G = Gate
S = Source
I
D25
HDMOS
11 m
11 m
12 m
R
Fax: +49-6206-503629
DS(on)
IXYS Semiconductor
TM
process
D = Drain
TAB = Drain
92785F (4/96)
150 ns
150 ns
150 ns
D (TAB)
t
rr

Related parts for IXFH76N06

IXFH76N06 Summary of contents

Page 1

... DS(on Pulse test, t 300 s, duty cycle ©1996 IXYS Corporation. All rights reserved. XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFH 76N06 IXFH 76N06 ...

Page 2

... XYS reserves the right to change limits, test conditions, and dimensions. I IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXYS Corporation 4,835,592 4,881,106 5,017,508 3540 Bassett Street, Santa Clara,CA 95054 4,850,072 4,931,844 5,034,796 Tel: 408-982-0700 Fax: 408-496-0670 ...

Page 3

... 0.8 V DSS DS DSS ©1995 IXYS Corporation. All rights reserved. XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFH 21N50 IXFM 21N50 IXFH/FM 21N50 IXFH/FM 24N50 ...

Page 4

... I RM Note 1: Add "S" suffix for TO-247 SMD PACKAGE OPTION (EX: IXFH24N50S) TO-247 SMD Outline XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFH 21N50 IXFM 21N50 Characteristic Values Min ...

Page 5

... XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFH 21N50 IXFH 24N50 IXFM 21N50 IXFM 24N50 Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 IXFH 26N50 IXYS Semiconductor Fax: +49-6206-503629 ...

Page 6

... XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFH 21N50 IXFH 24N50 IXFM 21N50 IXFM 24N50 Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 IXFH 26N50 IXYS Semiconductor Fax: +49-6206-503629 ...

Page 7

... 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle ©1996 IXYS Corporation. All rights reserved. XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFH/FM 6N90 IXFH/FM 6N100 ...

Page 8

... -di/dt = 100 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. , pulse test 4 6 D25 2600 ...

Page 9

... XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXFH 6N90 IXFM 6N90 IXFH 6N100 IXFM 6N100 Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXYS Semiconductor ...

Page 10

... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH 6N90 IXFH 6N100 IXFM 6N100 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFM 6N90 5,049,961 5,187,117 5,486,715 5,063,307 5,237,481 5,381,025 ...

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