IXTH35N30 IXYS Corporation, IXTH35N30 Datasheet
IXTH35N30
Manufacturer Part Number
IXTH35N30
Description
300V HiPerFET power MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXTH35N30.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH35N30
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTH35N30
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
V
J
J
C
C
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 A
= 250 A
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
IXTH35N30
IXTH40N30
IXTM40N30
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
IXTH 35N30
IXTH 40N30
IXTM 40N30
35N30
40N30
35N30
40N30
TO-204 = 18 g, TO-247 = 6 g
min.
300
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
300
300
140
160
300
150
300
20
30
35
40
0.085
0.088
max.
0.10
100
200
4
1
mA
W
nA
V
V
V
V
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AE (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
300 V
300 V
300 V
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
V
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
DSS
DS (on)
HDMOS
35 A
40 A
40 A
I
D
D = Drain,
TAB = Drain
D25
TM
G
process
0.10
0.085
0.088
R
D (TAB)
91535E(5/96)
DS(on)
1 - 4
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IXTH35N30 Summary of contents
Page 1
... Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 Characteristic Values ( unless otherwise specified) J min. typ. max. 300 125 C J IXTH35N30 IXTH40N30 0.085 IXTM40N30 0.088 V I DSS D25 300 300 300 TO-247 AD (IXTH ...
Page 2
... Characteristic Values ( unless otherwise specified) J min. typ. 35N30 40N30 35N30 40N30 JM = 100 V 400 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 35N30 IXTH 40N30 IXTM 40N30 TO-247 AD (IXTH) Outline max ...
Page 3
Fig. 1 Output Characteristics 10V 25° Volts DS Fig vs. Drain Current DS(on) 2 ...
Page 4
Fig.7 Gate Charge Characteristic Curve 150V 21A 10mA 100 125 150 175 200 Gate Charge - nCoulombs Fig.9 Capacitance Curves 4500 ...