EMP100E12M International Rectifier, EMP100E12M Datasheet

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EMP100E12M

Manufacturer Part Number
EMP100E12M
Description
Power Integrated Module
Manufacturer
International Rectifier
Datasheet
EMP Features:
Description
The EMP25P12B is a Power Integrated Module for Motor
Driver applications with embedded sensing resistors on all
three-phase output currents.
Each sensing resistor’s head is directly bonded to an
external pin to reduce parasitic effects and achieve high
accuracy on feedback voltages.
Since their thermal coefficient is very low, no value
compensation is required across the complete operating
temperature range.
The device comes in the EMP package, fully compatible in
length, width and height with EconoPack 2 outline.
Page 1
Power Module:
NPT IGBTs 25A, 1200V
10us Short Circuit capability
Gen III HexFred Technology
4mΩ sensing resistors on all phase outputs and
DCbus minus rail
Square RBSOA
Low Vce
Positive Vce
Low diode V
Soft reverse recovery
Thermal coefficient < 50ppm/°C
(on)
(2.28Vtyp @ 25A, 25°C)
(on)
F
(1.76Vtyp @ 25A, 25°C)
temperature coefficient
Pins Mapping
Package:
Power Module schematic:
EMP – Inverter (EconoPack 2 outline compatible)
resistors on all output phases and thermistor
Three phase inverter with current sensing
EMP25P12B
Advance Data
EMP25P12B
www.irf.com
PIM+

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EMP100E12M Summary of contents

Page 1

EMP Features: Power Module: • NPT IGBTs 25A, 1200V • 10us Short Circuit capability Square RBSOA Low Vce (2.28Vtyp @ 25A, 25°C) (on) Positive Vce temperature coefficient (on) • Gen III HexFred Technology Low diode V (1.76Vtyp @ 25A, 25°C) ...

Page 2

Pins Mapping Symbol Bus plus input signal Bus minus input signal (internally connected to COM Thermal sensor positive input Th - Thermal sensor negative input (internally connected to COM ...

Page 3

... The EMP module contains six IGBTs and HexFreds Diodes in a standard inverter configuration. IGBTs used are the new NPT 1200V-25A (current rating measured at 100C°), generation V from International Rectifier; the HexFred diodes have been designed specifically as pair elements for these power transistors. Thanks to the new design and technological realization, these devices do not need any negative gate voltage for their complete turn off ...

Page 4

Switching Characteristics: For proper operation the device should be used within the recommended conditions 25°C (unless otherwise specified) J Symbol Parameter Definition Q Total Gate Charge (turn on Gate – Emitter Charge (turn on ...

Page 5

Fig. 1 – Maximum DC collector Current vs. case temperature T = (ºC) C Fig. 3 – Forward SOA T = 25ºC; Tj ≤ 150º (V) CE Page 5 EMP25P12B Advance Data Fig. 2 – Power Dissipation ...

Page 6

Fig. 5 – Typical IGBT Output Characteristics 40º 300µ (V) CE Fig. 7 – Typical IGBT Output Characteristics Tj = 125º 300µ (V) CE Page 6 Fig. 6 – ...

Page 7

Fig. 9 – Typical 40º (V) GE Fig. 11 – Typical 125º (V) GE Page 7 vs vs. V Fig. 12 – Typical Transfer Characteristics ...

Page 8

Fig. 13 – Typical Energy Loss vs 125º 200µ 10Ω 15V (A) C Fig. 15 – Typical Energy Loss vs 125º 200µH; ...

Page 9

Fig. 17 – Typical Diode 125º (A) F Fig. 19 – Typical Diode 600V 15V 25A 125º /dt (A/µs F Page ...

Page 10

Fig. 21 – Typical Diode 125º (A) F Fig. 23 – Typical Gate Charge vs 25A 600µ (nC) G Page 10 vs. I REC F GE ...

Page 11

Page 11 EMP25P12B Advance Data www.irf.com ...

Page 12

Page 12 EMP25P12B Advance Data www.irf.com ...

Page 13

EMP family part number identification EMP Package type 2- Current rating 3- Current sensing configuration 4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code Page ...

Page 14

... IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 2002 International Rectifier - Printed in Italy 09-30 - Rev. 1.6 Page 14 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 ...

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