EMP100E12APBF International Rectifier, EMP100E12APBF Datasheet
EMP100E12APBF
Related parts for EMP100E12APBF
EMP100E12APBF Summary of contents
Page 1
EMP Features: Power Module: • NPT IGBTs 25A, 1200V • 10us Short Circuit capability Square RBSOA Low Vce (2.28Vtyp @ 25A, 25°C) (on) Positive Vce temperature coefficient (on) • Gen III HexFred Technology Low diode V (1.76Vtyp @ 25A, 25°C) ...
Page 2
EMP25P12B I27149 08/07 Pins Mapping Symbol DC IN+ DC Bus plus power input pin DC IN- DC Bus minus power input pin Bus plus signal connection (Kelvin point Bus minus signal connection (Kelvin point) ...
Page 3
... The EMP module contains six IGBTs and HexFreds Diodes in a standard inverter configuration. IGBTs used are the new NPT 1200V-25A (current rating measured at 100C°), generation V from International Rectifier; the HexFred diodes have been designed specifically as pair elements for these power transistors. Thanks to the new design and technological realization, these devices do not need any negative gate voltage for their complete turn off ...
Page 4
EMP25P12B I27149 08/07 Switching Characteristics: For proper operation the device should be used within the recommended conditions 25°C (unless otherwise specified) J Symbol Parameter Definition Q Total Gate Charge (turn on Gate – Emitter Charge (turn ...
Page 5
EMP25P12B I27149 08/07 Fig. 1 – Maximum DC collector Current vs. case temperature T = (ºC) C Fig. 3 – Forward SOA T = 25ºC; Tj ≤ 150º (V) CE www.irf.com Fig. 2 – Power Dissipation vs. ...
Page 6
EMP25P12B I27149 08/07 Fig. 5 – Typical IGBT Output Characteristics 40º 300µ (V) CE Fig. 7 – Typical IGBT Output Characteristics Tj = 125º 300µ (V) CE www.irf.com Fig. ...
Page 7
EMP25P12B I27149 08/07 Fig. 9 – Typical 40º (V) GE Fig. 11 – Typical 125º (V) GE www.irf.com vs vs. V Fig. 12 – Typical ...
Page 8
EMP25P12B I27149 08/07 Fig. 13 – Typical Energy Loss vs 125º 200µ 10Ω 15V (A) C Fig. 15 – Typical Energy Loss vs 125ºC; ...
Page 9
EMP25P12B I27149 08/07 Fig. 17 – Typical Diode 125º (A) F Fig. 19 – Typical Diode 600V 15V 25A 125º /dt ...
Page 10
EMP25P12B I27149 08/07 Fig. 21 – Typical Diode 125º (A) F Fig. 23 – Typical Gate Charge vs 25A 600µ (nC) G www.irf.com vs. I REC ...
Page 11
EMP25P12B I27149 08/07 Fig. 2 – Normalized Transient Thermal Impedance, Junction-to-copper plate (IGBTs) 4 Fig. 2 – Normalized Transient Impedance, Junction-to-copper plate (FRED diodes) 5 www.irf.com t1, Rectangular Pulse Duration (sec) t1, Rectangular Pulse Duration (sec) 11 ...
Page 12
EMP25P12B I27149 08/07 www.irf.com 12 ...
Page 13
EMP25P12B I27149 08/07 www.irf.com 13 ...
Page 14
EMP25P12B I27149 08/07 EMP family part number identification EMP Package type 2- Current rating 3- Current sensing configuration 4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code www.irf.com B 4 ...
Page 15
... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105 Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 2003 International Rectifier - Printed in Italy 08-07 - Rev. 2.3 www.irf.com Data and specifications subject to change without notice This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR’ ...