STP4407 Stanson Technology Co., Ltd., STP4407 Datasheet - Page 3

• Manufacturer Part Number: STP4407
• Description: P Channel Enhancement Node Mobfet
• Manufacturer: Stanson Technology Co., Ltd.

120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone]
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
Diode Forward Voltage
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
Parameter
Parameter
Parameter
Parameter
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
FAX: [phone]
T
Symbol
Symbol
V
Symbol
Symbol
R
V
J
(BR)DSS
I
t
t
=55℃
I
I
DS(on)
GS(th)
V
Q
D(on)
Q
d(on)
d(off)
gfs
Q
GSS
DSS
C
C
C
tr
tf
SD
gd
gs
g
oss
rss
iss
V
I
V
V
V
V
V
V
V
D
V
V
V
V
DS
V
I
GS
DS
DD
=-1A,V
DS
DS
GS
GS
S
DS
DS
GS
DS
DS
=V
=-1.0A,V
=0V,ID=-250uA
=15V,R
=0V,V
=-5V,V
=-20V,I
=-10V,I
=-5V, I
==-15V,VGS=0V
=-30V,V
=-30V,V
=-15V,V
=-5V,I
Condition
Condition
Condition
Condition
GS
f=1MHz
3
R
f=1MHz
G
,ID=-250uA
P Channel Enhancement Mode MOSFET
GEN
=3Ω
GS
GS
D
L
D
D
D
=-10V
=1.25Ω
=±25V
=-10A
GS
=-10A
GS
GS
GS
=-12A
=-12A
=-10V
=0V
=0V
=0V
=0V
-1.0
Min
Min
Min
Min
-30
-60
Copyright © 2007, Stanson Corp.
STP
STP
STP
STP4 4 4 4 4 4 4 4 07
Typ
Typ
Typ
Typ
2076
10.4
12.6
10
15
26
400
302
4.3
30
10
24
12
9
STP4407 2009. V1
±100
-3.0
Max
Max
Max
Max
2500
-1
-5
-1
07
07
07
-
12A
Unit
Unit
Unit
Unit
mΩ
nA
uA
nC
nS
V
V
A
S
V
pF