STP4925 Stanson Technology Co., Ltd., STP4925 Datasheet - Page 3

• Manufacturer Part Number: STP4925
• Description: Dual P Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
Static
Static
Static
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Tran Conductance
Diode Forward Voltage
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Turn-On Time
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Parameter
Parameter
Parameter
Parameter
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Symbol
Symbol
Symbol
Symbol
T
V
R
V
J
I
(BR)DSS
t
Coss
t
=85 ℃
Crss
I
I
Ciss
DS(on)
V
GS(th)
D(on)
g
Q
Q
d(off)
d(on)
Q
GSS
DSS
tr
tf
SD
fs
gd
gs
g
V
I
V
V
V
V
V
V
Dual P Channel Enhancement Mode MOSFET
D
V
V
V
V
DS
V
GS
GS
DS
I
DS
DS
=-1.0A,V
GS
DS
S
DS
DS
DS=-
DD
=V
=-2.3A,V
=-15V,V
=-10V, I
=-4.5V,I
=-10V,I
=0V,I
=0V,V
=-24V,V
=-24V,V
=-15V,VGS=0V
=15V,R
Condition
Condition
Condition
Condition
I
GS
5V,V
D
f=1MHz
R
≡ -9.0A
G
,I
=6 Ω
D
D
=-250uA
=-250 uA
GS
GS
GEN
D
GS
D
D
L
GS
=±20V
=-9.0A
GS
GS
=4.5V
=15 Ω
=-7.2A
=-5.6A
=-10V
=-10V
=0V
=0V
=0V
Copyright © 2007, Stanson Corp.
-1.0
Min
Min
Min
Min Typ
-30
-40
STP4
STP4
STP4
STP4925
STP4925 2009. V1
0.022
0.030
1650
Typ
-0.8 -1.2
Typ
Typ Max
350
235
2.3
4.5
24
16
16
17
65
35
925
925
925
0.025
0.040
±100
Max
Max
Max Unit
-3.0
110
24
30
30
80
-1
-5
-
7.2A
0
Unit
Unit
Unit
nA
uA
nC
nS
pF
Ω
V
V
A
S
V