STP3467 Stanson Technology Co., Ltd., STP3467 Datasheet

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STP3467

Manufacturer Part Number
STP3467
Description
P Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP3467
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
The STP3467 is the P-Channel enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN
PIN
PIN
PIN CONFIGURATION
TS
TS
TS
TSOP-
ORDERING
ORDERING
ORDERING
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
OP-
OP-
OP-6P
※ STP3467ST6RG
※ Week Code Code : A ~ Z ; a ~ z
CONFIGURATION
CONFIGURATION
CONFIGURATION
STP3467ST6RG
6P
6P
6P
Part
Part
Part
Part Number
Y:
Y:
Y:
A:
A:
A:
Y: Year
A: Week
D
D
67YW
Year
Year
Year
Week
Week
Week Code
Number
Number
Number
INFORMATION
INFORMATION
INFORMATION
S
D
Code
Code
Code
D
G
ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
Package
Package
Package
Package
FEATUR
FEATUR
FEATUR
FEATURE E E E
◆ -20V/-5.0A, R
◆ -20V/-3.5A, R
◆ -20V/-1.7A, R
TSOP-6
R
current capability
Super high density cell design for extremely low
Exceptional an-resistance and maximum DC
TSOP-6P package design
DS(ON)
P Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
=90mohm@VGS=-4.5V
=110mohm@VGS=-2.5V
=140mohm@VGS=-1.8V
Part
Part
Part
Part Marking
STP3467
STP3467
STP3467
STP3467
67YW
Marking
Marking
Marking
STP3467 2008. V1
-5.2A

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STP3467 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package ...

Page 2

... =70℃ =25℃ =70℃ STG R θJA STP3467 STP3467 STP3467 STP3467 -5.2A Typical Unit Typical Typical Typical Unit Unit Unit -20 V ±12 V -5.2 A -4.2 -20 A -1.7 A 2.0 W 1.3 -55/150 ℃ ℃ -55/150 90 ℃/W STP3467 2008. V1 ...

Page 3

... Typ Typ Min Min Typ Typ -20 -0.35 =±12V =0V GS =0V GS =-10V -6 0.075 0.090 0.090 0.110 =-4.2A 0.120 0.140 =-1.7A -10 =-2.8A -0.8 =0V 4.8 1.0 1.0 485 85 = =-4. STP3467 2008. V1 -5.2A Max Max Unit Unit Max Unit Max Unit V -0.8 V ±100 Ω ...

Page 4

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3467 STP3467 STP3467 STP3467 P Channel Enhancement Mode MOSFET STP3467 2008. V1 -5.2A ...

Page 5

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3467 STP3467 STP3467 STP3467 P Channel Enhancement Mode MOSFET STP3467 2008. V1 -5.2A ...

Page 6

... SOP-6 SOP-6 PACKAGE SOP-6 SOP-6 PACKAGE PACKAGE PACKAGE OUTLINE OUTLINE OUTLINE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3467 STP3467 STP3467 STP3467 P Channel Enhancement Mode MOSFET STP3467 2008. V1 -5.2A ...

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