DSS4160U Diodes, Inc., DSS4160U Datasheet - Page 2

• Manufacturer Part Number: DSS4160U
• Description: Low Vce Sat Npn Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS4160U
Document number: DS31684 Rev. 2 - 2
600
500
400
300
200
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
R
Characteristic
θJA
25
T , AMBIENT TEMPERATURE (°C)
A
= 313°C/W
Ambient Temperature (Note 3)
Fig. 1 Power Dissipation vs.
50
75
@T
A
100
= 25°C unless otherwise specified
125
V
V
V
R
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
C
I
I
I
BE(ON)
h
CBO
CES
EBO
t
t
f
150
on
t
off
t
FE
obo
t
t
T
d
s
r
f
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2 of 5
Min
250
200
100
150
80
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Typ
420
380
63
33
30
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.001
0.01
0.1
10
1
0.1
Max
100
100
100
115
150
280
280
1.1
0.9
50
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
vs. Collector-Emitter Voltage (Note 3)
MHz
Unit
Fig. 2 Typical Collector Current
mV
mΩ
nA
μA
nA
nA
pF
ns
ns
ns
ns
ns
ns
⎯
V
V
V
V
V
Pw = 100ms
1
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
CE
CC
= 1A, I
= 1A, I
= 1A, I
= 100μA, I
= 10mA, I
= 100μA, I
= 100mA, I
= 500mA, I
= 0.5A, I
= 5V, I
= 60V, I
= 60V, I
= 60V, V
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1.0MHz
= 10V, I
= 10V
DC
B
B
B
= 100mA
= 100mA
= 50mA
C
C
C
C
C
B1
Test Condition
B
E
E
C
= 0
E
C
= 1mA
= 500mA
= 1A
= 1A
BE
B
B
= I
= 0
= 0, T
= 0
10
= 50mA, f = 100MHz
= 0
= 0
= 1mA
= 50mA
= 0
B2
Pw = 10ms
= 25mA
A
DSS4160U
= 150°C
© Diodes Incorporated
Pw = 1ms
March 2009
100