FCB11N60F

Manufacturer Part NumberFCB11N60F
DescriptionFcb11n60f 600v N-channel Mosfet
ManufacturerFairchild Semiconductor
FCB11N60F datasheet
 


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FCB11N60F
600V N-Channel MOSFET
Features
• 650V @T
= 150°C
J
• Typ. R
= 0.32Ω
DS(on)
• Fast Recovery Type ( t
= 120ns )
rr
• Ultra low gate charge (typ. Q
= 40nC)
g
• Low effective output capacitance (typ. C
• 100% avalanche tested
G
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
*
Thermal Resistance, Junction-to-Ambient*
θJA
R
Thermal Resistance, Junction-to-Ambient
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FCB11N60F Rev. A1
Description
TM
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
.eff = 95pF)
oss
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
D
D
-PAK
2
S
FCB Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
May 2006
SuperFET
is, Farichild’s proprietary, new generation of high
D
G
S
FCB11N60F
Unit
600
V
11
A
7
A
A
33
± 30
V
340
mJ
11
A
12.5
mJ
50
V/ns
125
W
1.0
W/°C
°C
-55 to +150
°C
300
FCB11N60F
Unit
°C/W
1.0
°C/W
40
°C/W
62.5
www.fairchildsemi.com
TM
tm

FCB11N60F Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FCB11N60F Rev. A1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. ...

  • Page 2

    ... J ≤ 11A, di/dt ≤ 1200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCB11N60F Rev. A1 Package Reel Size 2 D -PAK 330mm T = 25°C unless otherwise noted C Conditions ...

  • Page 3

    ... D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss 3000 C 2000 iss C 1000 rss Drain-Source Voltage [V] DS FCB11N60F Rev. A1 Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 1 10 ...

  • Page 4

    ... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCB11N60F Rev. A1 (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 Notes : 250 μ A 0.5 D 0.0 100 150 200 ...

  • Page 5

    ... Unclamped Inductive Switching Test Circuit & Waveforms FCB11N60F Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FCB11N60F Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions 9.90 1.27 ±0.10 2.54 TYP 10.00 FCB11N60F Rev -PAK 2 ±0.20 0.80 ±0.10 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 0.10 ±0.15 2.40 ±0.20 +0.10 0.50 –0.05 10.00 ±0.20 (8.00) (4.40) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 8

    ... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FCB11N60F Rev. A1 ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...