MDC5001T1 ON Semiconductor, MDC5001T1 Datasheet

MDC5001T1

Manufacturer Part Number

MDC5001T1

Description

Low Voltage Bias Stabilizer With Enable

Manufacturer

ON Semiconductor

Datasheet

1.MDC5001T1.pdf (12 pages)

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Low Voltage Bias Stabilizer

with Enable

•

element around an external discrete, NPN BJT or N−Channel FET. It

allows the external transistor to have its emitter/source directly

grounded and still operate with a stable collector/drain DC current. It

is primarily intended to stabilize the bias of discrete RF stages

operating from a low voltage regulated supply, but can also be used to

stabilize the bias current of any linear stage in order to eliminate

emitter/source bypassing and achieve tighter bias regulation over

temperature and unit variations. The “ENABLE” polarity nulls

internal current, Enable current, and RF transistor current in

“STANDBY.” This device is intended to replace a circuit of three to

six discrete components.

and small package make the MDC5001T1 ideal for portable

communications applications such as:

•

ON Semiconductort

February, 2005 − Rev. XXX

This device provides a reference voltage and acts as a DC feedback

The combination of low supply voltage, low quiescent current drain,

and Field Effect Transistors

Emitter Ballast and Bypass Components

Unit−to−Unit Parametric Changes

Products

Maintains Stable Bias Current in N−Type Discrete Bipolar Junction

Provides Stable Bias Using a Single Component Without Use of

Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc

Reduces Bias Current Variation Due to Temperature and

Consumes t 0.5 mW at V

Active High Enable is CMOS Compatible

Cellular Telephones

Pagers

PCN/PCS Portables

GPS Receivers

PCMCIA RF Modems

Cordless Phones

Broadband and Multiband Transceivers and Other Portable Wireless

= 2.75 V

INTERNAL CIRCUIT DIAGRAM

ENBL

(5)

MDC5001T1

INTEGRATED CIRCUIT

CASE 419B−01, Style 19

SMALLBLOCK™

Publication Order Number:

SILICON

SOT−363

GND (2) and (3)

MDC5001T1/D

(4)

out

ref

(1)

(6)

Related parts for MDC5001T1

MDC5001T1 Summary of contents

Page 1

... Enable current, and RF transistor current in “STANDBY.” This device is intended to replace a circuit of three to six discrete components. The combination of low supply voltage, low quiescent current drain, and small package make the MDC5001T1 ideal for portable communications applications such as: • Cellular Telephones • ...

Page 2

MAXIMUM RATINGS Rating Power Supply Voltage Ambient Operating Temperature Range Storage Temperature Range Junction Temperature Collector Emitter Voltage (Q2) Enable Voltage (Pin 5) THERMAL CHARACTERISTICS Characteristic Total Device Power Dissipation (FR−5 PCB of 1″ × 0.75″ × 0.062″ ...

Page 3

... The following SPICE models are provided as a convenience to the user and every effort has been made to insure their accuracy. However, no responsibility for their accuracy is assumed by ON Semiconductor. .MODEL Q4 NPN BF = 136 1.005 CJC = 318 140 CJE = 569.2 f RBM = 70 CJS = 1 180 ...

Page 4

TYPICAL OPEN LOOP CHARACTERISTICS (Vdc) ref V Figure 1. V versus ref CC http://onsemi.com 4 out ...

Page 5

TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuits of Figures 10 through 15 2.75 Vdc 100 mA ENBL out = out 10 0 −10 −20 ...

Page 6

TYPICAL CLOSED LOOP PERFORMANCE 1 2.75 Vdc 1 ENBL CC 0 −0.5 −1 ...

Page 7

ENABLE (5) Q2 MDC5001 + GND (2) & (3) Figure 10. I versus V Test Circuit ( ENABLE V ( MDC5001 + Q4 V ...

Page 8

CLOSED LOOP TEST CIRCUITS V ENABLE (5) MDC5001 + 2.75 V GND (2) & (3) Figure 16. V and RF Stage I ref V ENABLE (5) MDC5001 + 2.75 V GND (2) ...

Page 9

V (4) CC ENABLE (5) V ENBL MDC5001 + 2. GND (2) & (3) 5−STEP DESIGN PROCEDURE Step 1: Choose V (1.8 V Min Max) CC Step 2: Insure that Min V ...

Page 10

V (4) CC ENABLE (5) V ENBL MDC5001 + 2.75 V GND (2) & (3) 7−STEP DESIGN PROCEDURE Step 1: Choose V (1.8 V Min Max) CC Step 2: Insure that Min V ...

Page 11

PACKAGE DIMENSIONS −B− 0.2 (0.008 SC−88 (SOT−363) CASE 419B−01 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

Page 12

... Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone: 81−3−5740−2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MILLIMETERS MIN MAX 0.9 0.65 BSC 1.6 NOM 0.34 NOM then Dial 866−297−9322 MDC5001T1/D ...

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