BUT11AX

Manufacturer Part NumberBUT11AX
DescriptionSilicon Diffused Power Transistor
ManufacturerNXP Semiconductors
BUT11AX datasheet
 
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Philips Semiconductors
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in
converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
P
Total power dissipation
tot
V
Collector-emitter saturation voltage
CEsat
I
Collector saturation current
Csat
t
Fall time
f
PINNING - SOT186A
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
I
Base current (DC)
B
I
Base current peak value
BM
P
Total power dissipation
tot
T
Storage temperature
stg
T
Junction temperature
j
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
Junction to heatsink
th j-hs
R
Junction to ambient
th j-a
November 1995
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
PIN CONFIGURATION
case
1 2 3
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
CONDITIONS
with heatsink compound
in free air
1
Product specification
BUT11AX
TYP.
MAX.
UNIT
-
1000
V
-
450
V
-
5
A
-
10
A
-
32
W
-
1.5
V
2.5
-
A
150
-
ns
SYMBOL
c
b
e
MIN.
MAX.
UNIT
-
1000
V
-
450
V
-
5
A
-
10
A
-
2
A
-
4
A
-
32
W
-65
150
˚C
-
150
˚C
TYP.
MAX.
UNIT
-
3.95
K/W
55
-
K/W
Rev 1.100

BUT11AX Summary of contents

  • Page 1

    ... Junction to heatsink th j-hs R Junction to ambient th j-a November 1995 CONDITIONS ˚C hs PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BUT11AX TYP. MAX. UNIT - 1000 V - 450 1 150 - ns SYMBOL ...

  • Page 2

    ... 500 mA CONDITIONS Con Bon Boff Con Bon - 2 0 Con Bon - 100 ˚ Product specification BUT11AX MIN. TYP. MAX. - 2500 - 10 - MIN. TYP. MAX 1 2 450 - - - - 1 1 ...

  • Page 3

    ... VCEOsust . CEOsust V = 300 VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUT11AX ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

  • Page 4

    ... BUT11AX 0.01 Fig.10. Forward bias safe operating area. T (1) ( III 1200 NB max BUT11AX 10 100 CE 4 Product specification BUT11AX 0.01 ICM max IC max 100 us ( (2) 500 ms DC III 1000 1 10 100 ...

  • Page 5

    ... Philips Semiconductors Silicon Diffused Power Transistor Fig.11. Typical base-emitter and collector-emitter saturation voltages. Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. V November 1995 BEsat C CEsat f(I ); parameter I CEsat B 5 Product specification BUT11AX C Rev 1.100 ...

  • Page 6

    ... Philips Semiconductors Silicon Diffused Power Transistor Fig.13. Typical base-emitter saturation voltage. November 1995 V = f(I ); parameter I BEsat B C Fig.14. Transient thermal impedance f(t); parameter j- Product specification BUT11AX Rev 1.100 ...

  • Page 7

    ... Fig.15. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 7 Product specification BUT11AX 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.100 1.0 (2x) 0.9 0.7 ...

  • Page 8

    ... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 8 Product specification BUT11AX Rev 1.100 ...