BUT11AX NXP Semiconductors, BUT11AX Datasheet - Page 2

• Manufacturer Part Number: BUT11AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 Measured with half sine-wave voltage (curve tracer).
November 1995
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
I
V
V
V
h
h
hs
SYMBOL
t
t
t
t
t
t
t
CES
CES
EBO
on
s
f
s
f
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages I
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (resistive load)
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
1
CONDITIONS
waveform;
R.H.
CONDITIONS
V
V
T
V
I
L = 25 mH
I
I
I
CONDITIONS
I
I
-V
I
-V
B
C
C
C
C
Con
Con
Con
j
BE
BE
EB
= 0 A; I
= 2.5 A; I
= 2.5 A; I
= 5 mA; V
= 500 mA; V
BB
BB
= 125 ˚C
65% ; clean and dustfree
= 2.5 A; I
= 2.5 A; I
= 2.5 A; I
= 0 V; V
= 0 V; V
= 9 V; I
= 5 V
= 5 V; T
2
C
= 100 mA;
C
B
B
CE
CE
CE
j
= 0 A
= 0.5 A
= 0.5 A
Bon
Bon
Bon
= 100 ˚C
= V
= V
CE
= 5 V
= -I
= 0.5 A; L
= 0.5 A; L
= 5 V
CESMmax
CESMmax
Boff
= 0.5 A
;
B
B
= 1 H;
= 1 H;
MIN.
MIN.
450
10
10
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
150
170
0.6
3.5
0.6
1.5
1.8
10
18
20
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
2500
BUT11AX
1.0
2.0
1.5
1.3
10
35
35
-
-
-
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
mA
mA
mA
pF
ns
ns
V
V
V
V
s
s
s
s
s