BUT11AX NXP Semiconductors, BUT11AX Datasheet - Page 3

• Manufacturer Part Number: BUT11AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
November 1995
Silicon Diffused Power Transistor
R
Fig .3. Test circuit resistive load. V
B
and R
30-60 Hz
250
200
100
VIM
0
IC / mA
0
V
Fig.2. Oscilloscope display for V
CC
L
T
= 250 V; t
calculated from I
Fig.1. Test circuit for V
tp
6V
p
300R
= 20 s; = t
R
VCE / V
B
Con
and I
p
R
VCC
CEOsust
Oscilloscope
Bon
T.U.T.
/ T = 0.01.
L
1R
VCEOsust
IM
100-200R
Horizontal
Vertical
min
requirements.
= -6 to +8 V
CEOsust
.
+ 50v
.
3
Fig. 6. Switching times waveforms with inductive load.
Fig. 4. Switching times waveforms with resistive load.
V
CC
IB
IC
-VBB
IB
IC
IBon
= 300 V; -V
Fig. 5. Test circuit inductive load.
10 %
tr 30ns
ton
BE
90 %
= 5 V; L
LB
-IBoff
ts
toff
IBon
C
= 200 uH; L
LC
Product specification
ts
toff
tf
90 %
ICon
VCC
-IBoff
IBon
10 %
BUT11AX
ICon
tf
B
T.U.T.
= 1 uH
Rev 1.100
90 %
10 %
t
t