BUT11XI NXP Semiconductors, BUT11XI Datasheet

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BUT11XI

Manufacturer Part Number
BUT11XI
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUT11XI.pdf (7 pages)
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in
electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
August 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
case
CONDITIONS
V
T
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
Con
1 2 3
BE
hs
BE
hs
1
= 2.5 A; I
=2.5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B
Bon
= 0.33 A
=0.5 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
2.5
-65
80
55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1000
e
1000
c
3.95
450
150
450
150
150
1.5
10
32
10
32
BUT11XI
5
5
2
4
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A

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BUT11XI Summary of contents

Page 1

... ˚ =0.5 A Con Bon PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BUT11XI TYP. MAX. UNIT - 1000 V - 450 1 150 ns SYMBOL c ...

Page 2

... 2 CONDITIONS Con Bon Boff Con Bon - 2 0 Con Bon - 100 ˚ Product specification BUT11XI MIN. TYP. MAX. - 2500 - 10 - MIN. TYP. MAX 1 2 450 - - - - 1 1 ...

Page 3

... VCEOsust . CEOsust V = 300 VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUT11XI ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

Page 4

... BUT11AX 0.01 Fig.10. Forward bias safe operating area. T (1) ( III 1200 NB max BUT11AX 10 100 CE 4 Product specification BUT11XI 0.01 ICM max IC max 100 us ( (2) 500 ms DC III 1000 1 10 100 ...

Page 5

... Philips Semiconductors Silicon Diffused Power Transistor August 1997 Fig.11. Transient thermal impedance f(t); parameter j- Product specification BUT11XI Rev 1.000 ...

Page 6

... Fig.12. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1997 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 6 Product specification BUT11XI 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.000 1.0 (2x) 0.9 0.7 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1997 7 Product specification BUT11XI Rev 1.000 ...

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