BUT12AI NXP Semiconductors, BUT12AI Datasheet

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BUT12AI

Manufacturer Part Number
BUT12AI
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited
for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
June 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
stg
j
CESM
CEO
tot
CEsat
tab
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Inductive fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
Con
1 2 3
BE
hs
BE
hs
1
= 5 A; I
= 5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B
= 0.86A
Bon
= 1.0 A;T
j
SYMBOL
100˚C
b
TYP.
TYP.
MIN.
Product specification
-65
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1000
e
1000
c
1.15
450
110
300
450
110
150
150
1.5
20
20
60
BUT12AI
8
8
4
6
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A

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BUT12AI Summary of contents

Page 1

... T 25 ˚ 0.86A 1.0 A;T Con Bon PIN CONFIGURATION tab CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BUT12AI TYP. MAX. UNIT - 1000 V - 450 110 100˚C 300 ns ...

Page 2

... Con Bon Boff 1 Con Bon - 100 ˚ 50v 100-200R 250 Horizontal 200 Oscilloscope Vertical 100 Fig.2. Oscilloscope display for V CEOsust 2 Product specification BUT12AI MIN. TYP. MAX 1 3 450 - - - - 1 1 5.8 10 12.5 TYP. ...

Page 3

... IBon -VBB Fig.7. Test circuit RBSOA. V VCC 120 110 100 T.U. Product specification BUT12AI ICon toff IBon -IBoff VCC LC LB T.U.T. = 150 200 H; V 850 Normalised Power Derating PD% ...

Page 4

... Fig.11. Typical base-emitter saturation voltage VCEsat / IC=2A 0.1 0.1 10 Fig.12. Typical collector-emitter saturation voltage Product specification BUT12AI 125 0.8 1.2 1 f(I ); parameter I BEsat 125 VCEsat = f(IB); parameter IC Rev 1.000 2 ...

Page 5

... FE 100 0.01 Fig.15. Typical DC current gain. hFE = f(IC) DC 1000 VCE / V = 25˚C mb Zth / (K/W) 1E+01 1E+00 1E-01 0.05 0.02 D=0 1E-02 800 1000 T Fig.16. Transient thermal impedance max 5 Product specification BUT12AI 125 C 0 parameter VCE 0.5 0.2 0 1E-05 1E-03 1E- f(t); parameter j- BUX100 t ...

Page 6

... Dimensions in mm Net Mass 3,0 max not tinned max (2x) Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.17. TO220AB; pin 2 connected to mounting base. 6 Product specification BUT12AI 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1997 7 Product specification BUT12AI Rev 1.000 ...

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