US112S Unisonic Technologies, US112S Datasheet

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US112S

Manufacturer Part Number
US112S
Description
Suitable To Fit All Modes Of Control Found In Applications Such As Overvoltage Crowbar Protection
Manufacturer
Unisonic Technologies
Datasheet
UTC US112S/N
SCRs
DESCRIPTION
control found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,
capacitive
circuits.
ABSOLUTE MAXIMUM RATINGS
Repetitive peak off-state voltages
RMS on-state current (180° conduction angle) (Tc = 105°C)
Average on-state current (180° conduction angle) (Tc = 105°C)
Non repetitive surge peak on-state current (Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
UTC
The UTC US112S/N is suitable to fit all modes of
discharge
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
100 n s, F = 60 Hz , Tj = 125°C,)
UNISONIC TECHNOLOGIES CO., LTD.
ignition,
PARAMETER
voltage
tp=8.3ms
tp=10ms
US112S/N-4
US112S/N-6
US112S/N-8
regulation
1: CATHODE
SYMBOL
I
P
V
T(RMS)
I
dI/dt
Tstg

I
T(AV)
I
V
V
TSM
G(AV)
RGM
I²t
GM
Tj
DRM
RRM
US112S
2: ANODE
RATING
-40 ~ +150
-40 ~ +125
400
600
800
146
140
12
98
50
8
4
1
US112N
5
3: GATE
TO-220
QW-R301-013,B
SCR
UNIT
A/µs
A²S
°C
°C
W
V
A
A
A
A
V
1

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US112S Summary of contents

Page 1

... UTC US112S/N SCRs DESCRIPTION The UTC US112S/N is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits, capacitive discharge ignition, voltage circuits. ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages RMS on-state current (180° ...

Page 2

... UTC US112S/N UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS (Tj=25 unless otherwise specified) PARAMETER SYMBOL Gate trigger Current Gate trigger Voltage Gate non-trigger voltage 125°C Reverse gate voltage Holding Current I H Latching Current Circuit Rate Of Change Of V dV/dt off-state Voltage Tj = 125° ...

Page 3

... IT(av)( Fig.3-1:Relative variation of thermal impedance junction to case vs pulse duration. K=<Zth(j-c)/Rth(j-c)> 1.0 0.5 0.2 tp(s) 0.1 1E-3 1E-2 1E-1 Figure.4-1:Relative variation of gate trigger current,holding current and latching vs junction temperature (US112S) IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25:¼ 2.0 1.8 1.6 IGT 1.4 1.2 IH&IL Rgk=1kè 1.0 0.8 0.6 0.4 0.2 Tj(:) 0.0 -40 - 100 ...

Page 4

... US112N dI/dt US112S limitation US112N 100 US112S tp(ms) 10 0.01 0.10 1. UTC UNISONIC TECHNOLOGIES CO., LTD. Fig.6: Relative variation of dV/dt immunity vs gate- cathode resistance(typical values) (US112S) dV/dt(Rgk)/dV/dt(Rgk=220è¼ 10.0 Ta=25: 1.0 Rgk(è) 0.1 0.0 0.2 0.4 1E+1 Fig.8: Surge peak on-state current vs number of cycles dV/dt(Rgk)/dV/dt(Rgk=220è¼ 10.0 1.0 Rgk(è) 0.1 0.0 0.2 0.4 125 150 Fig ...

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