1SS355 EIC Semiconductor Incorporated, 1SS355 Datasheet
1SS355
Manufacturer Part Number
1SS355
Description
Silicon Epitaxial High Speed Switching Diode
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.1SS355.pdf
(2 pages)
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• Smal plastic package suitable for surface mounted design
• High Speed (Trr = 1.2 ns Typ.)
• High reliability with high surge current handling capability
• Pb / RoHS Free
• High speed switching
• Silicon planar zener diode in a small
Page 1 of 2
FEATURES :
APPLICATIONS
DESCRIPTION
Maximum Ratings and Thermal Characteristics
Electrical Characteristics
1SS355
Parameter
Maximum Peak Reverse Voltage
Maximum DC Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Current
Maximum Surge Current (1s)
Maximum Junction Temperature
Storage Temperature Range
Parameter
Forward Voltage
Reverse Current
Capacitance between terminals
Reverse Recovery Time
plastic SMD SOD-323 package
(Ta = 25°C unless otherwise noted )
Symbol
Trr
V
C
I
R
F
T
I
V
f = 1MHz ; V
I
R
F
F
R
L
= 100 mA
= 10 mA , V
= 80 V
= 100 Ω
(Rating at 25
Test Condition
HIGH SPEED SWITCHING DIODE
R
R
= 0.5
Symbol
= 6 V
°
C ambient temperature unless otherwise specified .)
V
V
I
I
FSM
SILICON EPITAXIAL
T
T
RRM
I
FM
RM
F
J
S
Dimensions in millimeters
Min.
SOD-323
-
-
-
-
-55 to + 125
1.80
1.60
2.80
2.30
Value
Typ.
Rev. 02 : February 20,2006
100
255
500
125
90
80
-
-
-
-
Max.
1.2
0.1
3.0
4.0
Unit
Unit
mA
mA
mA
μA
°C
°C
pF
ns
V
V
V
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1SS355 Summary of contents
Page 1
... FEATURES : • Smal plastic package suitable for surface mounted design • High Speed (Trr = 1.2 ns Typ.) • High reliability with high surge current handling capability • RoHS Free APPLICATIONS • High speed switching DESCRIPTION • Silicon planar zener diode in a small ...
Page 2
... RATING AND CHARACTERISTIC CURVES ( 1SS355 ) FIG.1 - FORWARD CURRENT DERATING CURVE 100 100 AMBIENT TEMPERATURE, ( FIG.3 - TYPICAL FORWARD CHARACTERISTICS 1 100m 10m °C 1m 100μ 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE, VOLTS Page FIG.2 - MAXIMUM SURGE CURRENT 100 10 1 125 150 175 0 ...