1N4151W-V Vishay, 1N4151W-V Datasheet

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1N4151W-V

Manufacturer Part Number
1N4151W-V
Description
Small Signal Fast Switching Diode
Manufacturer
Vishay
Datasheet
Small Signal Fast Switching Diode
Features
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
1)
Document Number 85721
Rev. 1.2, 06-Apr-05
• Silicon Epitaxial Planar Diode
• Fast switching diode
• This diode is also available in other case
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
1N4151W-V
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
Power dissipation
amb
Valid provided that electrodes are kept at ambient temperature.
styles including the DO-35 case with the type des-
ignation 1N4151, and the MiniMELF case with the
type designation LL4151.
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Part
Parameter
1N4151W-V-GS18 or 1N4151W-V-GS08
T
t < 1 s and T
T
amb
amb
= 25 °C and f ≥ 50 Hz
= 25 °C
Test condition
j
Ordering code
= 25 °C
e3
Symbol
I
I
V
F(AV)
P
FSM
V
RM
tot
R
A5
Marking
Vishay Semiconductors
Value
150
410
500
50
75
1)
1)
1N4151W-V
Tape and Reel
Remarks
www.vishay.com
Unit
mW
mA
mA
V
V
1

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1N4151W-V Summary of contents

Page 1

... Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4151W-V 1N4151W-V-GS18 or 1N4151W-V-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Reverse voltage Peak reverse voltage = 25 ° ...

Page 2

... Vishay Semiconductors Thermal Characteristics °C, unless otherwise specified amb Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage ...

Page 3

... Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 85721 Rev. 1.2, 06-Apr-05 18664 Figure 4. Relative Capacitance vs. Reverse Voltage 10000 = 25 ° kHz 1000 100 10 100 18744 Figure 5. Leakage Current vs. Junction Temperature 200 1N4151W-V Vishay Semiconductors = 25 ° MHz 1.0 0.9 0.8 0 ...

Page 4

... Vishay Semiconductors 100 ν 0.1 0 18709 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Package Dimensions in mm (Inches) 0.1 (0.004) max. 0.55 (0.022) Cathode Band 1.70 (0.067) 1.40 (0.055) www.vishay.com 4 I ν Pulse Length ( 1.35 (0.053) max. ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85721 Rev. 1.2, 06-Apr-05 and may do so without further notice. 1N4151W-V Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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