DF2S10FS TOSHIBA Semiconductor CORPORATION, DF2S10FS Datasheet
DF2S10FS
Manufacturer Part Number
DF2S10FS
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF2S10FS.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2S10FS
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
ESD Protection Diode
including the constant-voltage diode applications.
Absolute Maximum Ratings
Pad Dimension (Reference)
Electrical Characteristics
*This device is intended for electrostatic discharge (ESD) protection and should not be used for any other purpose,
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
2-pin ultra-small package suitable for high-density mounting
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
(between Cathode and Anode)
Power dissipation
Junction temperature
Storage temperature range
Cu pad dimension of 4 mm × 4 mm.
0.26
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
0.21
Characteristic
Characteristic
0.85
TOSHIBA Diodes for Protecting against ESD
(Ta = 25°C)
Unit: mm
(Ta = 25°C)
Symbol
Symbol
DF2S10FS
T
V
Z
C
I
T
P
stg
R
Z
Z
T
j
I
I
V
V
Z
Z
R
R
= 5 mA
= 5 mA
= 8 V
= 0 V, f = 1 MHz
−55~150
Rating
150*
150
1
Test Condition
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.0006 g (typ.)
fSC
Min
9.4
―
―
―
0.07
M
A
Typ.
10
16
―
―
0.2
±0.05
10.6
Max
0.5
0.6±0.05
30
―
DF2S10FS
1-1L1A
2008-02-02
―
―
Unit
μA
pF
V
Ω
0.1±0.05
A
0.48
Unit: mm
+0.02
-0.03
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DF2S10FS Summary of contents
Page 1
... Unit: mm (Ta = 25°C) Symbol Test Condition MHz DF2S10FS 0.6±0.05 Unit mW °C 0.2 ±0.05 °C A 0.07 M fSC ― JEDEC JEITA ― 1-1L1A TOSHIBA Weight: 0.0006 g (typ.) Min Typ. Max 9.4 10 10.6 ― ...
Page 2
... Marking : 7 Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) Criterion: No damage to device elements Equivalent Circuit (Top View) ±30kV 2 DF2S10FS 2008-02-02 ...
Page 3
... 0.1 0.01 0.001 5 10 ZENER VOLTAGE V 100 Ta = 25℃ ( DF2S10FS f=1MHz Ta=25℃ REVERSE VOLTAGE V (V) R 2008-02- ...
Page 4
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 DF2S10FS 20070701-EN 2008-02-02 ...