DF2S20FS TOSHIBA Semiconductor CORPORATION, DF2S20FS Datasheet

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DF2S20FS

Manufacturer Part Number
DF2S20FS
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2S20FS
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Absolute Maximum Ratings (Ta = 25°C)
Pad Dimension (Reference)
Electrical Characteristics
*This product is for protection against electrostatic discharge (ESD) only
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
2-pin ultra-small package suitable for high-density mounting
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
(between Cathode and Anode)
Power dissipation
Junction temperature
Storage temperature range
pad dimension of 4 mm × 4 mm.
0.26
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
0.21
Characteristic
Characteristic
0.85
TOSHIBA Diodes for Protecting against ESD
(Ta = 25°C)
Unit: mm
Symbol
Symbol
DF2S20FS
T
V
Z
C
I
T
P
stg
R
Z
Z
T
j
I
I
V
V
Z
Z
R
R
= 5 mA
= 5 mA
−55 to 150
= 15 V
= 0 V, f = 1 MHz
Rating
150*
150
1
Test Condition
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.6 mg (typ.)
fSC
18.8
Min
0.07
M
A
Typ.
9
0.2
±0.05
21.2
Max
0.5
0.6±0.05
55
DF2S20FS
1-1L1A
2008-11-11
Unit
μA
pF
V
Ω
0.1±0.05
A
0.48
Unit: mm
+0.02
-0.03

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DF2S20FS Summary of contents

Page 1

... Unit: mm (Ta = 25°C) Symbol Test Condition MHz DF2S20FS 0.6±0.05 Unit 0.2 ±0. 0.07 M °C °C fSC ― JEDEC JEITA ― 1-1L1A TOSHIBA Weight: 0.6 mg (typ.) Min Typ. Max 18.8 ― 21.2 ― ...

Page 2

... Marking 9 Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) Criterion: No damage to device elements Equivalent Circuit (Top View) ± DF2S20FS 2008-11-11 ...

Page 3

... Ta=25 ℃ 1 0.1 0.01 0.001 Zener voltage V ZENER VOLTAGE VZ (V) 100 ( DF2S20FS Reverse Voltage V (V) REVERSE VOLTAGE   VR(V) R 2008-11-11 f=1MHz Ta=25° ...

Page 4

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 DF2S20FS 20070701-EN GENERAL 2008-11-11 ...

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