DF2S18CT TOSHIBA Semiconductor CORPORATION, DF2S18CT Datasheet

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DF2S18CT

Manufacturer Part Number
DF2S18CT
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Absolute Maximum Ratings (Ta = 25°C)
Electrical Characteristics
Marking
* This product is for protection against electrostatic discharge (ESD) only
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
(between Cathode and Anode)
Power dissipation
Junction temperature
Storage temperature range
pad dimension of 4 mm × 4 mm.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
YE
YR
Characteristic
Characteristic
TOSHIBA Diodes for Protecting against ESD
(Ta = 25°C)
Symbol
Symbol
DF2S18CT
T
V
Z
C
I
T
P
stg
R
Z
Z
T
j
I
I
V
V
Z
Z
R
R
= 5 mA
= 5 mA
−55 to 150
Equivalent Circuit
= 14 V
= 0 V, f = 1 MHz
Rating
150*
150
1
Test Condition
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.7 mg (typ.)
(top view)
17.84
Min
CST2
0.38
0.6±0.05
Typ.
+0.02
-0.03
10
18.17
Max
0.5
40
DF2S18CT
1-1P1A
2009-07-09
0.5±0.03
Unit
μA
pF
V
Ω
0.05±0.03
Unit: mm

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DF2S18CT Summary of contents

Page 1

... Symbol Test Condition MHz Equivalent Circuit 1 DF2S18CT 0.6±0.05 Unit 0.5±0.03 +0.02 0.38 mW -0.03 °C °C CST2 ― JEDEC JEITA ― 1-1P1A TOSHIBA Weight: 0.7 mg (typ.) Min Typ. Max 17.84 ― 18.17 ― ― ...

Page 2

... Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) Criterion: No damage to device elements ± DF2S18CT 2009-07-09 ...

Page 3

... 0.1 0.01 0.001 ZENER VOLTAGE Z 10 Ta=25℃ ( DF2S18CT REVERSE VOLTAGE (V) R 2009-07-09 Ta=25℃ f=1MHz ...

Page 4

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 DF2S18CT 2009-07-09 ...

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