DF2S12FS TOSHIBA Semiconductor CORPORATION, DF2S12FS Datasheet
DF2S12FS
Manufacturer Part Number
DF2S12FS
Description
Toshiba Diodes For Protecting Against Esd Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF2S12FS.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2S12FS
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
Absolute Maximum Ratings
Pad Dimension(Reference)
Electrical Characteristics
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
2terminal ultra small package suitable for mounting on small space.
Note: Using continuously under heavy loads (e.g. the application of high
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Power dissipation
Junction temperature
Storage temperature range
0.26
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
0.21
Characteristic
Characteristic
0.85
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
(Ta = 25°C)
Unit: mm
(Ta = 25°C)
Symbol
Symbol
DF2S12FS
T
C
V
Z
P*
I
T
stg
R
Z
Z
T
j
Circuit
Test
―
―
―
―
−55~150
Rating
150
150
1
I
I
V
V
Z
Z
R
R
= 5 mA
= 5 mA
= 9 V
= 0 V, f = 1 MHz
Test Condition
Unit
mW
°C
°C
Weight: 0.0006 g (typ.)
JEDEC
JEITA
TOSHIBA
fSC
0.07
M
A
11.4
Min
―
―
―
0.2
±0.05
0.6±0.05
Typ.
12.0
15
―
―
1-1L1A
DF2S12FS
⎯
⎯
2007-11-01
12.6
0.05
Max
25
―
0.1±0.05
A
0.48
Unit: mm
+0.02
-0.03
Unit
μA
pF
Ω
V
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DF2S12FS Summary of contents
Page 1
... Symbol Test Condition Circuit V ― ― ― ― MHz DF2S12FS Unit: mm 0.6±0.05 A 0.2 0.1±0.05 ±0.05 A 0.07 M +0.02 0.48 -0.03 fSC ⎯ JEDEC ⎯ JEITA TOSHIBA 1-1L1A Weight: 0.0006 g (typ.) Min Typ. Max Unit 11.4 12.0 12.6 ― ...
Page 2
... Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit 8 ZENER VOLTAGE VZ(V) ESD Immunity Level ± (Top View) 2 DF2S12FS REVERSE VOLTAGE VR(V) 2007-11-01 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 DF2S12FS 20070701-EN 2007-11-01 ...