2N6232 Microsemi Corporation, 2N6232 Datasheet
2N6232
Manufacturer Part Number
2N6232
Description
Silicon Npn Transistor
Manufacturer
Microsemi Corporation
Datasheet
1.2N6232.pdf
(2 pages)
SILICON NPN TRANSISTOR
Devices
2N6232
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
(1) Pulse Test: Pulse Width = Duty Cycle < %
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
•
•
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Peak
Base Current – Continuous
Total Power Dissipation @ T
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Sustaining Voltage
Collector-Emitter Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
I
V
V
V
C
CE
CE
EB
FAST SWITCHING
LOW SATURATION VOLTAGE
= 100 mAdc, I
= 100 Vdc, RBE = 0 Ω, T
= 140 Vdc, R
= 7.0 Vdc, I
Characteristics
C
B
be
= 0
= 0
Ratings
= 0
(1)
Characteristics
C
= 25
C
= 150
0
C
(2)
0
C
C
= 25
0
C unless otherwise noted)
Symbol
Symbol
T
V
V
V
R
J
,
P
CBO
I
I
CEO
EBO
θ
T
C
B
D
JC
stg
-65 to +200
Value
Max.
1.25
6.67
100
140
7.0
10
V
Symbol
TECHNICAL DATA
CEO
I
I
I
EBO
CES
CES
(
sus
Units
W/
0
Unit
Vdc
Vdc
Vdc
Adc
Adc
C/W
W
0
)
C
0
C
Min.
100
Max.
0.2
0.1
10
10 AMP
100 V
TO-5
Page 1 of 2
mAdc
uAdc
uAdc
Unit
Vdc
10604
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2N6232 Summary of contents
Page 1
... SILICON NPN TRANSISTOR Devices 2N6232 • FAST SWITCHING • LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (1) Collector Current – Peak Base Current – Continuous Total Power Dissipation @ Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS ...
Page 2
... Vdc 1.0 MHz CB E SWITCHING CHARACTERISTICS I = 5.0 Adc Ib2 = 0 Duty Cycle – 2.0% (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 2N6232 Symbol Min CE(sat) V BE(ON) C obo t on ...