2N5401S Korea Electronics (KEC GROUP), 2N5401S Datasheet

2N5401S

Manufacturer Part Number

2N5401S

Description

Epitaxial Planar Pnp Transistor General Purpose, High Voltage

Manufacturer

Korea Electronics (KEC GROUP)

Datasheet

1.2N5401S.pdf (2 pages)

Current page: 1 of 2
Download datasheet (34Kb)

1999. 12. 22

GENERAL PURPOSE APPLICATION.

HIGH VOLTAGE APPLICATION.

FEATURES

MAXIMUM RATING (Ta=25 )

Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

High Collector Breakdwon Voltage

Low Leakage Current.

Low Saturation Voltage

Low Noise : NF=8dB (Max.)

: V

: I

: V

CBO

CE(sat)

CHARACTERISTIC

=-50nA(Max.) @V

=-160V, V

=-0.5V(Max.) @I

CEO

=-150V

Revision No : 2

SEMICONDUCTOR

=-120V

=-50mA, I

TECHNICAL DATA

SYMBOL

=-5mA

CBO

CEO

EBO

stg

RATING

-55 150

-160

-150

-600

-100

350

150

-5

UNIT

EPITAXIAL PLANAR PNP TRANSISTOR

Type Name

Marking

1. EMITTER

2. BASE

3. COLLECTOR

2N5401S

SOT-23

DIM

MILLIMETERS

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

0.13+0.10/-0.05

1.00+0.20/-0.10

0.00 ~ 0.10

Lot No.

2.93 0.20

1.30 MAX

0.20 MIN

1.90

0.95

0.55

+ _

1/2

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2N5401S Summary of contents

Page 1

... B SYMBOL RATING UNIT V -160 V CBO V -150 V CEO EBO I -600 -100 350 150 j T -55 150 stg 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR DIM MILLIMETERS 2.93 0. 1.30+0.20/-0.15 C 1.30 MAX 2 3 0.45+0.15/-0. 2.40+0.30/-0. 0.13+0.10/-0.05 K 0. 0.20 MIN 1.00+0.20/-0. EMITTER 2 ...

Page 2

... DC Current Gain * Collector-Emitter * Saturation Voltage Base-Emitter * Saturation Voltage Transition Frequency Collector Output Capacitance Small-Signal Current Gain Noise Figure * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1999. 12. 22 Revision 2N5401S SYMBOL TEST CONDITION V =-120V CBO V =-120V, I =0, Ta=100 ...

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