RN1972FS TOSHIBA Semiconductor CORPORATION, RN1972FS Datasheet

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RN1972FS

Manufacturer Part Number
RN1972FS
Description
Toshiba Transistor Silicon Npn Epitaxial Type Pct Process Bias Resistor Built-in Transistor
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
Equivalent Circuit
(top view)
Note:
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Two devices are incorporated into a fine pitch small mold (6-pin) package
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN2972FS, RN2973FS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Q1
Total rating
6
1
Characteristics
5
2
Q2
4
3
RN1972FS,RN1973FS
(Ta = 25°C) (Q1, Q2 common)
P
Symbol
C
V
V
V
T
(Note)
CBO
CEO
EBO
I
T
stg
C
j
−55~150
Rating
150
20
20
50
50
5
1
Unit
mW
mA
°C
°C
V
V
V
Weight: 0.001g (typ.)
RN1972FS,RN1973FS
JEDEC
JEITA
TOSHIBA
fS6
0.1±0.05
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
1
3
2
1.0±0.05
0.8±0.05
2-1F1C
2004-07-09
4
6
5
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
Unit: mm
0.1±0.05

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RN1972FS Summary of contents

Page 1

... Unit CBO CEO EBO (Note 150 °C j −55~150 T °C stg 1 RN1972FS,RN1973FS Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 0.1±0. (E1) 1.EMIITTER1 (E2) 2.EMITTER2 (B2) 3.BASE2 (C2) 4.COLLECTOR2 (B1) 5.BASE1 fS6 (C1) 6.COLLECTOR1 JEDEC ― JEITA ― TOSHIBA 2-1F1C Weight: 0.001g (typ.) ...

Page 2

... I V EBO mA 0. (sat MHz ⎯ RN1972FS,RN1973FS Min Typ. Max Unit ⎯ ⎯ 100 nA ⎯ ⎯ 100 nA ⎯ ⎯ 300 ⎯ ⎯ 0.15 V ⎯ ⎯ 1.2 pF 17.6 22 26.4 kΩ 37 ...

Page 3

... EMITTER COMMON VCE=0.2V 0.1 0 INPUT VOLTAGE VI(ON) (V) RN1973FS IC - VI(ON) 100 10 Ta=100° -25 EMITTER COMMON VCE=0.2V 0.1 0 INPUT ON VOLTAGE VI(ON) (V) RN1972FS,RN1973FS RN1972FS IC - VI(OFF) 10000 1000 Ta=100°C 25 100 10 100 0 0.2 0.4 INPUT VOLTAGE VI(OFF) (V) RN1973FS IC - VI(OFF) 10000 Ta=100°C 1000 100 25 10 100 0 0.2 0.4 INPUT ON VOLTAGE VI(OFF) (V) ...

Page 4

... VCE= COLLECTOR CURRENT IC (mA) RN1972FS 1000 100 100 0.1 RN1973FS 1000 Ta=100°C 100 0.1 100 4 RN1972FS,RN1973FS VCE(sat Ta=100°C 25 -25 EMITTER COMMON IC / IB= 100 COLLECTOR CURRENT IC (mA) VCE(sat Ta=100°C -25 25 EMITTER COMMON IC / IB= 100 COLLECTOR CURRENT IC (mA) 2004-07-09 ...

Page 5

... When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Marking 5 4 Type name Type name RN1972FS,RN1973FS 2004-07-09 ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. RN1972FS,RN1973FS 6 030619EAA 2004-07-09 ...

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