RN1107F TOSHIBA Semiconductor CORPORATION, RN1107F Datasheet
RN1107F
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RN1107F Summary of contents
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... C) Maximum Ratings Characteristic Collector-base voltage RN1107F~1109F Collector-emitter voltage RN1107F~1109F Emitter-base voltage Collector current RN1107F~1109F Collector power dissipation RN1107F~1109F Junction temperature RN1107F~1109F Storage temperature range RN1107F~1109F Type No. R1 (kΩ) R2 (kΩ) RN1107F 10 47 RN1108F 22 47 RN1109F 47 22 Symbol Rating ...
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... Collector-emitter RN1107F~1109F saturation voltage RN1107F Input voltage (ON) RN1108F RN1109F RN1107F Input voltage (OFF) RN1108F RN1109F Translation frequency RN1107F~1109F Collector output RN1107F~1109F capacitance RN1107F Input Resistor RN1108F RN1109F RN1107F Resistor Ratio RN1108F RN1109F (Ta = 25° ° ° ° C) Test Symbol Test Condition ...
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... RN1107F~RN1109F 3 2001-06-07 ...
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... RN1107F~RN1109F 4 2001-06-07 ...
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... Type Name Marking RN1107F RN1108F RN1109F RN1107F~RN1109F 5 2001-06-07 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. RN1107F~RN1109F 6 000707EAA 2001-06-07 ...