BCR08AM Renesas Electronics Corporation., BCR08AM Datasheet
BCR08AM
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BCR08AM Summary of contents
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To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April ...
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... GM T Junction temperature j T Storage temperature stg — Weight Typical value 1. Gate open. MITSUBISHI SEMICONDUCTOR < TRIAC > MITSUBISHI SEMICONDUCTOR < TRIAC > BCR08AM BCR08AM LOW POWER USE LOW POWER USE PLANAR PASSIVATION TYPE PLANAR PASSIVATION TYPE OUTLINE DRAWING 5.0 MAX. VOLTAGE CLASS TYPE NAME T TERMINAL 1 ...
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... VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c RATED SURGE ON-STATE CURRENT 3.5 4 CONDUCTION TIME (CYCLES AT 60Hz) BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE Limits Unit Min. Typ. Max. — — 1.0 mA — — 2.0 V — — 2.0 V — — 2.0 V — ...
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... MAXIMUM ON-STATE POWER DISSIPATION 2.0 1.8 1.6 1.4 1.2 1.0 0.8 360 0.6 CONDUCTION 0.4 RESISTIVE, INDUCTIVE 0.2 LOADS 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 RMS ON-STATE CURRENT (A) MITSUBISHI SEMICONDUCTOR < TRIAC > BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 3 10 TYPICAL EXAMPLE –60 –40 – ...
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... TYPICAL EXAMPLE 140 120 100 –60 –40 – 100120 140 JUNCTION TEMPERATURE ( C) MITSUBISHI SEMICONDUCTOR < TRIAC > BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 5 10 TYPICAL EXAMPLE ...
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... MITSUBISHI SEMICONDUCTOR < TRIAC > PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 3 10 TYPICAL EXAMPLE RGT RGT III GATE CURRENT PULSE WIDTH ( s) G BCR08AM LOW POWER USE Mar. 2002 ...