RN4983FE TOSHIBA Semiconductor CORPORATION, RN4983FE Datasheet
RN4983FE
Manufacturer Part Number
RN4983FE
Description
Toshiba Transistor Silicon Npn ? Pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.RN4983FE.pdf
(6 pages)
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Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Equivalent Circuit and Bias Resistor Values
Marking
R1: 22 kΩ
R2: 22 kΩ
(Q1, Q2 common)
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Q1
B
R1
6 C
C
E
TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type
Q2
(PCT Process) (Bias Resistor Built-in Transistor)
B
R1
RN4983FE
C
E
1
Equivalent Circuit
Q1
6
1
Weight: 0.003 g (typ.)
JEDEC
JEITA
TOSHIBA
5
2
(top view)
4
3
Q2
RN4983FE
2-2N1G
2004-07-01
―
―
Unit: mm
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RN4983FE Summary of contents
Page 1
... Equivalent Circuit and Bias Resistor Values R1: 22 kΩ R2: 22 kΩ (Q1, Q2 common) Marking 6 C RN4983FE Equivalent Circuit RN4983FE Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2N1G Weight: 0.003 g (typ.) (top view 2004-07-01 ...
Page 2
... Note: Total rating Symbol Rating Unit CBO CEO EBO I 100 mA C Symbol Rating Unit − CBO − CEO − EBO −100 Symbol Rating Unit P (Note) 100 150 °C j −55~150 T °C stg 2 RN4983FE 2004-07-01 ...
Page 3
... −0 (OFF − − − MHz Symbol Test Condition ⎯ R1 ⎯ R1/R2 3 RN4983FE Min Typ. Max Unit ⎯ ⎯ 100 nA ⎯ ⎯ 500 ⎯ 0.17 0.33 mA ⎯ ⎯ 70 ⎯ 0.1 0.3 V ⎯ 1.3 3.0 V ⎯ ...
Page 4
... Q1 4 RN4983FE 2004-07-01 ...
Page 5
... Q2 5 RN4983FE 2004-07-01 ...
Page 6
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 RN4983FE 030619EAA 2004-07-01 ...