DMN2004K Diodes, Inc., DMN2004K Datasheet

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DMN2004K

Manufacturer Part Number
DMN2004K
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Diodes, Inc.
Datasheet

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Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
Notes:
DMN2004K
Document number: DS30938 Rev. 3 - 2
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5. Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB.
Characteristic
ESD protected up to 2kV
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Steady
A
State
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
T
T
A
A
Symbol
R
TOP VIEW
= 25°C
= 85°C
BV
V
DS (ON)
I
C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
I
|Y
V
C
C
GS(th)
DSS
GSS
SD
oss
DSS
iss
rss
fs
|
www.diodes.com
SOT-23
Min
1 of 4
200
0.5
0.5
20
Mechanical Data
Symbol
Symbol
T
Gate
V
V
j,
R
I
P
T
DSS
GSS
I
DM
θ JA
Typ
D
0.4
0.5
0.7
EQUIVALENT CIRCUIT
d
STG
Gate
Protection
Diode
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.008 grams (approximate)
Drain
Max
0.55
0.70
150
1.0
0.9
1.4
±1
25
20
1
Source
Unit
μA
μA
ms
pF
pF
pF
-65 to +150
Ω
V
V
V
Value
Value
540
390
350
357
1.5
20
±8
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
= 0V, I
= 16V, V
= V
= 4.5V, I
=10V, I
= 16V, V
= ±4.5V, V
= 2.5V, I
= 1.8V, I
= 0V, I
GS
, I
Test Condition
D
S
D
D
= 10μA
D
D
D
= 115mA
GS
GS
= 0.2A
= 250μA
= 540mA
= 500mA
= 350mA
DS
= 0V
= 0V
DMN2004K
= 0V
© Diodes Incorporated
Units
Units
November 2007
°C/W
mW
mA
°C
V
V
A

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DMN2004K Summary of contents

Page 1

... R DS (ON) 0.7 ⎯ 200 fs ⎯ 0 ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss www.diodes.com DMN2004K Drain Source Value Units 20 V ±8 V 540 mA 390 1.5 A Value Units 350 mW 357 °C/W -65 to +150 °C Max Unit Test Condition ⎯ 0V 10μA ...

Page 2

... Document number: DS30938 Rev Fig 0.5 0.1 ° ° ° - ° - www.diodes.com DMN2004K V , GATE-SOURCE VOLTAGE (V) GS Reverse Drain Current vs. Source-Drain Voltage I DRAIN CURRENT ( Fig. 4 Static Drain-Source On-Resistance vs. Drain Current November 2007 © Diodes Incorporated 6 ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage I , DRAIN CURRENT (mA) D Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004K Document number: DS30938 Rev JUNCTION TEMPERATURE ( C) j Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1,000 V , DRAIN SOURCE VOLTAGE (V) DS Fig. 12 Capacitance Variation www.diodes.com DMN2004K ° November 2007 © Diodes Incorporated ...

Page 4

... Dim α All Dimensions in mm Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN2004K Packaging 3000/Tape & Reel 2010 2011 X Y Aug Sep Oct Nov SOT-23 Min Max 0.37 0.51 1.20 1.40 2.30 2.50 0.89 1.03 0.45 0.60 1.78 2 ...

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