DMN2004WK Diodes, Inc., DMN2004WK Datasheet

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DMN2004WK

Manufacturer Part Number
DMN2004WK
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Diodes, Inc.
Datasheet

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DMN2004WK-7
Manufacturer:
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Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
Notes:
DMN2004WK
Document number: DS30934 Rev. 3 - 2
Low On-Resistance: R
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
ESD protected up to 2kV
Characteristic
Characteristic
DS(ON)
@T
A
= 25°C unless otherwise specified
@T
Steady
@T
State
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
C
I
I
|Y
V
C
C
GS(th)
DSS
GSS
SD
oss
DSS
iss
rss
fs
|
TOP VIEW
T
T
A
A
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
= 25°C
= 85°C
www.diodes.com
Min
200
0.5
0.5
20
SOT-323
1 of 4
Mechanical Data
Symbol
Symbol
Typ
T
0.4
0.5
0.7
V
V
j,
R
I
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
P
T
DSS
GSS
I
DM
θ JA
D
Gate
d
STG
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Max
0.55
0.70
150
1.0
0.9
1.4
±1
25
20
1
Drain
Source
-65 to +150
Value
Value
540
390
200
625
1.5
Unit
20
±8
ms
μA
μA
pF
pF
pF
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
=10V, I
= 0V, I
= 0V, I
= 16V, V
= ±4.5V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 16V, V
DMN2004WK
Test Condition
GS
, I
S
D
D
D
= 115mA
= 10μA
D
D
D
GS
= 0.2A
GS
© Diodes Incorporated
= 250μA
November 2007
Units
Units
°C/W
= 540mA
= 500mA
= 350mA
DS
mW
mA
°C
= 0V
= 0V
V
V
A
= 0V

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DMN2004WK Summary of contents

Page 1

... R DS (ON) 0.7 ⎯ 200 fs ⎯ 0 ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss www.diodes.com DMN2004WK Drain Gate Protection Source Diode Value 20 ±8 540 390 1.5 Value 200 625 -65 to +150 Max Unit Test Condition ⎯ 0V 10μ μA ...

Page 2

... I , DRAIN CURRENT (A) D Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004WK Document number: DS30934 Rev Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 1 0.1 I DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current www.diodes.com DMN2004WK , GATE-SOURCE VOLTAGE ( November 2007 © Diodes Incorporated ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage I , DRAIN CURRENT (mA) D Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004WK Document number: DS30934 Rev JUNCTION TEMPERATURE ( C) j Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1000 V , DRAIN SOURCE VOLTAGE (V) DS Fig. 12 Capacitance Variation www.diodes.com DMN2004WK ° November 2007 © Diodes Incorporated ...

Page 4

... D 0.65 Nominal F 0.30 G 1.20 H 1. 0.90 L 0.25 M 0.10 α 0° All Dimensions in mm Dimensions Value (in mm 0.65 IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN2004WK Packaging 3000/Tape & Reel 2010 2011 X Y Aug Sep Oct Nov Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° 2.8 1.0 0.7 0.9 1.9 November 2007 © Diodes Incorporated ...

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