SI7491DP Vishay, SI7491DP Datasheet

no-image

SI7491DP

Manufacturer Part Number
SI7491DP
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7491DP-T1-E3
Manufacturer:
VISHAY
Quantity:
5 149
Company:
Part Number:
SI7491DP-T1-E3
Quantity:
1 500
Part Number:
SI7491DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72276
S-52554-Rev. B, 19-Dec-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
THERMAL RESISTANCE RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
– 30
Ordering Information:
(V)
8
6.15 mm
D
0.0085 at V
0.013 at V
7
D
6
r
DS(on)
D
PowerPAK SO-8
Bottom View
GS
5
Si7491DP-T1
Si7491DP-T1—E3 (Lead (Pb)-free)
GS
J
a
D
Parameter
Parameter
= 150 °C)
(Ω)
= – 4.5 V
a
= – 10 V
1
S
P-Channel 30-V (D-S) MOSFET
a
2
S
3
S
a
5.15 mm
4
b,c
G
I
A
D
– 18
– 14
= 25 °C, unless otherwise noted
(A)
Steady State
Steady State
T
T
T
T
t ≤ 10 sec
New Product
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Battery and Load Switching
Symbol
Symbol
G
T
R
R
J
Package with Low 1.07-mm Profile
- Notebook and Tablet Computers
- Notebook and Tablet Battery Packs
V
V
I
P
, T
I
DM
thJA
thJC
I
P-Channel MOSFET
DS
GS
D
S
D
stg
S
D
®
Power MOSFETS
10 secs
Typical
– 4.5
– 18
– 14
3.2
1.7
20
54
5
– 55 to 150
± 20
– 30
– 50
260
Steady State
Maximum
– 1.6
– 11
– 8
1.8
1.1
2.2
25
68
Vishay Siliconix
Si7491DP
www.vishay.com
®
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

Related parts for SI7491DP

SI7491DP Summary of contents

Page 1

... Bottom View Ordering Information: Si7491DP-T1 Si7491DP-T1—E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7491DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Document Number: 72276 S-52554-Rev. B, 19-Dec-05 New Product 6500 5200 3900 2600 1300 0.025 0.020 0.015 °C 0.010 J 0.005 0.000 0.8 1.0 1.2 Si7491DP Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.4 1.2 1.0 0.8 ...

Page 4

... Si7491DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product = 250 μ 100 125 150 100 Limited by r DS(on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage (V) ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72276. Document Number: 72276 S-52554-Rev. B, 19-Dec-05 New Product - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7491DP Vishay Siliconix - www.vishay.com ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords