MCH3312 Sanyo Semiconductor Corporation, MCH3312 Datasheet

MCH3312

Manufacturer Part Number

MCH3312

Description

Ultrahigh-speed Switching P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH3312.pdf (4 pages)

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Ordering number : ENN7009

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : JM

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0

V DS =- -30V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =- -1A

I D =--1A, V GS =- -10V

I D =--0.5A, V GS =- -4V

MCH3312

Conditions

Package Dimensions

unit : mm

2167A

Conditions

0.65

2.0

0.8mm)

0.3

[MCH3312]

min

P-Channel Silicon MOSFET

--1.2

--30

1.4

71801 TS IM TA-3098

0.15

Ratings

typ

Ratings

205

110

MCH3312

2.0

--55 to +150

Continued on next page.

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

max

150

- -30

--2.6

145

290

--2

--8

--1

No.7009-1/4

Unit

Related parts for MCH3312

MCH3312 Summary of contents

Page 1

... I D =--1mA DSS -30V GSS 16V (off -10V =--1mA yfs -10V - (on =--1A -10V R DS (on =--0.5A -4V P-Channel Silicon MOSFET MCH3312 [MCH3312] 0.3 0. 0.65 2 Gate 2 : Source 3 : Drain SANYO : MCPH3 1 2 ...

Page 2

... See specified Test Circuit t f See specified Test Circuit =--10V -10V =--2A Qgs V DS =--10V -10V =--2A Qgd V DS =--10V -10V =-- =--2A --15V -- = OUT MCH3312 S --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 ...

Page 3

... --10V -- --2A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH3312 -- --10V --1 --0 --0. --0.2 --0.3 --10 IT03227 3 2 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. MCH3312 PS No.7009-4/4 ...

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