XP151A12A2MR TOREX SEMICONDUCTOR LTD., XP151A12A2MR Datasheet

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XP151A12A2MR

Manufacturer Part Number
XP151A12A2MR
Description
N-channel Power Mosfet
Manufacturer
TOREX SEMICONDUCTOR LTD.
Datasheet

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XP151A12A2MR
Power MOSFET
■EQUIVALENT CIRCUIT
■GENERAL DESCRIPTION
The XP151A12A2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION
.
■FEATURES
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
N-Channel Power MOSFET
DMOS Structure
Small Package
■PIN ASSIGNMENT
■ABSOLUTE MAXIMUM RATINGS
* When implemented on a ceramic PCB
Storage Temperature Range
Channel Power Dissipation *
PIN NUMBER
Drain Current (Pulse)
Drain - Source Voltage
Reverse Drain Current
Gate - Source Voltage
Channel Temperature
Drain Current (DC)
PARAMETER
1
2
3
PIN NAME
G
D
S
: Rds(on) = 0.16Ω@ Vgs = 2.5V
: 2.5V
: SOT-23
SYMBOL RATINGS UNITS
Vdss
Vgss
Tstg
Tch
Idp
Idr
Pd
Id
-55~150
FUNCTION
±12
150
0.5
Source
20
1
4
1
Drain
Gate
ETR1118_001
Ta = 25℃
W
V
V
A
A
A
1/5

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XP151A12A2MR Summary of contents

Page 1

... XP151A12A2MR Power MOSFET ■GENERAL DESCRIPTION The XP151A12A2MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible ■ ...

Page 2

... XP151A12A2MR ■ELECTRICAL CHARACTERISTICS DC Characteristics PARAMETER SYMBOL Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance *1 Forward Transfer Admittance *1 Body Drain Diode Forward Voltage *1 Effective during pulse test. Dynamic Characteristics PARAMETER SYMBOL Input Capacitance Output Capacitance Feedback Capacitance Switching Characteristics ...

Page 3

... PERFOMANCE CHARACTERISTICS XP151A12A2MR 3/5 ...

Page 4

... XP151A12A2MR ■TYPICAL PERFOMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 4/5 ...

Page 5

... Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd. XP151A12A2MR 5/5 ...

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