XP1C301 Panasonic Corporation of North America, XP1C301 Datasheet

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XP1C301

Manufacturer Part Number
XP1C301
Description
Silicon Pnp Npn Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
Composite Transistors
XP1C301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
Tr1
Tr2
Overall
Features
Two elements incorporated into one package.
(Tr1 base is connected to Tr2 emitter.)
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SB709A+2SD601A
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
V
V
V
V
V
T
I
I
P
CBO
I
CBO
I
T
CEO
EBO
CEO
EBO
CP
CP
stg
C
C
T
j
(Ta=25˚C)
–55 to +150
Ratings
–100
–200
–60
–50
100
200
150
150
–7
60
50
7
Unit
mW
mA
mA
mA
mA
˚C
˚C
V
V
V
V
V
V
Marking Symbol:
Internal Connection
1 : Emitter (Tr1)
2 : Base (Tr1)
Emitter (Tr2)
1
2
3
1
2
3
0.425
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
1.25 0.1
2.1 0.1
4R
Tr1
Tr2
0.425
5
4
5
4
0.2 0.1
Unit: mm
1

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XP1C301 Summary of contents

Page 1

... Composite Transistors XP1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification Features Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) Reduction of the mounting area and assembly cost by one half. Basic Part Number of Element ...

Page 2

... 20V 10V 10V 2mA 160 100mA 10mA 10V –2mA 200MHz 10V 1MHz CB E XP1C301 typ max Unit – 0.1 A –100 A 460 – 0.3 – 0 MHz 2.7 pF typ max Unit 0.1 A 100 A 460 0.1 ...

Page 3

... Collector current I C XP1C301 I — – 400 V = – Ta=25˚C – 350 – 300 – 250 – 200 – 150 –100 – 50 ...

Page 4

... Emitter current — 1200 V =10V CE Ta=25˚C 1000 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1 Base to emitter voltage V BE XP1C301 NF — =–5V CB f=1kHz R = Ta=25˚ 0.01 0.03 0.1 0 Emitter current Parameter — 300 I ...

Page 5

... CE G =80dB V Function=FLAT 200 Ta=25˚C 160 R =100k g 120 80 22k 4. 100 200 300 500 1000 ( A ) Collector current I C XP1C301 h — 600 V =10V CE 500 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0 0.1 0 100 ( mA ) Collector current ...

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