XP1C301 Panasonic Corporation of North America, XP1C301 Datasheet - Page 4

• Manufacturer Part Number: XP1C301
• Description: Silicon Pnp Npn Epitaxial Planer Transistor
• Manufacturer: Panasonic Corporation of North America

Composite Transistors
4
160
140
120
100
20
18
16
14
12
10
80
60
40
20
60
50
40
30
20
10
8
6
4
2
0
0
0
0.1
0.1
0
Characteristics charts of Tr2
V
R
Ta=25˚C
V
Ta=25˚C
Collector to emitter voltage V
CB
CB
g
=50k
0.2
Emitter current I
0.3
Emitter current I
=–5V
=–10V
2
0.3
0.5
1
I
f=100Hz
NF — I
C
f
4
T
— V
— I
3
1
1kHz
6
E
CE
E
2
10
E
E
10kHz
3
( mA )
( mA )
Ta=25˚C
I
B
8
CE
=160 A
30
140 A
120 A
100 A
80 A
60 A
40 A
20 A
5
( V )
100
10
10
1200
1000
800
600
400
200
300
200
100
50
30
20
10
0
8
7
6
5
4
3
2
1
0
5
3
2
1
0.1
–1
0
Collector to base voltage V
Base to emitter voltage V
0.2
–2
Emitter current I
0.2
h Parameter — I
0.3
–3
C
I
0.5
–5
h
ob
B
re
0.4
— V
( 10
— V
–10
1
–4
h
h
h
ie
0.6
)
oe
BE
CB
fe
(k )
–20
( S)
2
E
–30
3
( mA )
V
Ta=25˚C
E
V
f=270Hz
Ta=25˚C
0.8
f=1MHz
I
Ta=25˚C
BE
CE
E
CB
CE
=0
–50
=10V
5
= – 5V
( V )
( V )
–100
1.0
10
300
200
100
240
200
160
120
50
30
20
10
80
40
6
5
4
3
2
1
0
0.01 0.03
0
5
3
2
1
0.1
0
Base to emitter voltage V
h
Collector to emitter voltage V
re
Emitter current I
0.2
Ta=75˚C
h Parameter — V
( 10
0.4
0.3
–4
)
0.1
I
NF — I
0.5
C
0.8
— V
25˚C
0.3
1
h
BE
1.2
fe
XP1C301
–25˚C
E
h
2
E
1
h
oe
ie
V
f=1kHz
R
Ta=25˚C
( S)
3
( mA )
CE
(k )
V
CB
g
I
f=270Hz
Ta=25˚C
1.6
BE
CE
E
CE
=2k
=2mA
3
=–5V
=10V
5
( V )
( V )
2.0
10
10