MA3J742 Panasonic Corporation of North America, MA3J742 Datasheet
MA3J742
Manufacturer Part Number
MA3J742
Description
Silicon Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA3J742.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA3J74200L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA3J742
Silicon epitaxial planar type
For switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: February 2005
• Two MA3X716 (MA716) is contained in one package (series
• Forward voltage V
• Optimum for high frequency rectification because of its short
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current Single
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Detection efficiency
connection)
reverse recovery time t
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
fep3.Absolute frequency of input and output is 2 GHz.
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
F
Single
Series
Series
, optimum for low voltage rectification
*
rr
Pulse Generator
(PG-10N)
R
s
(MA742)
= 50 Ω
Symbol
Bias Application Unit (N-50BU)
V
I
T
V
T
I
FM
RM
stg
F
R
a
j
Symbol
= 25°C ± 3°C
A
V
V
C
I
t
η
a
R
rr
F1
F2
t
= 25°C
−55 to +125
Wave Form Analyzer
(SAS-8130)
R
Rating
i
= 50 Ω
150
110
125
30
30
30
20
I
I
V
V
I
I
V
R
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
L
R
R
IN
= 1 mA
= I
= 30 mA
= 1 mA, R
SKH00056CED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
V
Conditions
L
= 100 Ω
, f = 30 MHz
L
V
= 10 pF
R
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: M1U
Internal Connection
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
5˚
t
Anode 2
(0.65)
1
1.3
2.0
I
F
±0.1
±0.2
(0.65)
I
I
R
3
Output Pulse
F
R
L
2
= 10 mA
= 10 mA
0.3
Min
= 100 Ω
+0.1
–0
t
I
rr
rr
= 1 mA
1
t
Typ
1.5
1.0
65
3
2
SMini3-F1 Package
Max
0.9
0.4
1.0
1
±0.1
EIAJ: SC-79
Unit: mm
0.15
Unit
µA
pF
ns
%
V
+0.1
–0.05
1
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MA3J742 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type For switching ■ Features • Two MA3X716 (MA716) is contained in one package (series connection) • Forward voltage V , optimum for low voltage rectification F • Optimum for high frequency rectification because of its short reverse recovery time t rr ■ ...
Page 2
... MA3J742 75°C 25° 125°C −20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F −1 10 −2 10 − 120 160 200 ( °C ) Ambient temperature V ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...