MT16JSF25664H Micron Semiconductor Products, MT16JSF25664H Datasheet

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MT16JSF25664H

Manufacturer Part Number
MT16JSF25664H
Description
Ddr3 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet

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MT16JSF25664HY-1G1D1
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DDR3 SDRAM SODIMM
MT16JSF25664H – 2GB
For component data sheets, refer to Micron’s Web site:
Features
• DDR3 functionality and operations supported as
• 204-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC3-10600, PC3-8500,
• 2GB (256 Meg x 64)
• V
• V
• Nominal and dynamic on-die termination (ODT) for
• Dual rank
• On-board I
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Table 1:
PDF: 09005aef83364b70/Source: 09005aef83364bd3
JSF16C256x64HZ.fm - Rev. A 5/08 EN
Speed
defined in the component data sheet
(SODIMM)
or PC3-6400
data, strobe, and mask signals
serial presence-detect (SPD) EEPROM
via the mode register set (MRS)
Grade
-1G5
-1G4
-1G3
-1G1
-1G0
-80C
-80B
DD
DDSPD
= 1.5V ±0.075V
= +3.0V to +3.6V
Nomenclature
2
Key Timing Parameters
C temperature sensor with integrated
PC3-10600
PC3-10600
PC3-10600
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC3-8500
PC3-8500
PC3-6400
PC3-6400
CL = 10
1333
1333
1333
2GB (x64, DR) 204-Pin Halogen-Free DDR3 SDRAM SODIMM
CL = 9
1333
1333
Data Rate (MT/s)
CL = 8
1333
1066
1066
1066
1066
www.micron.com
1
CL = 7
1066
1066
1066
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Frequency/CAS latency
PCB height: 30.0mm (1.181in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– Halogen-free DIMM
– 1.5ns @ CL = 8 (DDR3-1333)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.5ns @ CL = 10 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– 1.87ns @ CL = 8 (DDR3-1066)
– 2.5ns @ CL = 5 (DDR3-800)
– 2.5ns @ CL = 6 (DDR3-800)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
CL = 6
800
800
800
800
800
800
800
module offerings.
204-Pin SODIMM (MO-268 R/C F)
CL = 5
800
800
A
A
1
≤ +85°C)
≤ +70°C)
13.125
t
(ns)
13.5
12.5
RCD
©2008 Micron Technology, Inc. All rights reserved.
12
15
15
15
2
2
2
2
13.125
(ns)
13.5
12.5
t
12
15
15
15
RP
Marking
Features
None
-1G5
-1G4
-1G3
-1G1
-1G0
-80C
-80B
Z
I
50.625
(ns)
49.5
52.5
52.5
t
48
51
50
RC

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MT16JSF25664H Summary of contents

Page 1

... DDR3 SDRAM SODIMM MT16JSF25664H – 2GB For component data sheets, refer to Micron’s Web site: Features • DDR3 functionality and operations supported as defined in the component data sheet • 204-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC3-10600, PC3-8500, or PC3-6400 • ...

Page 2

... The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16JSF25664HZ-1G1D1. PDF: 09005aef83364b70/Source: 09005aef83364bd3 JSF16C256x64HZ.fm - Rev. A 5/08 EN ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 204-Pin DDR3 SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 105 REF 107 ...

Page 4

Table 5: Pin Descriptions Symbol Type Description A[13:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in ...

Page 5

Table 5: Pin Descriptions (continued) Symbol Type Description V DQ Supply Reference voltage: DQ REF V Supply Ground Supply Termination voltage: Used for control, command, and address ( – No connect: These pins are ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1# DQS1 DM1 DM DQ8 DQ DQ9 ...

Page 7

... General Description The MT16JSF25664H DDR3 SDRAM module is a high-speed, CMOS dynamic random access 2GB memory module organized in a x64 configuration. This DDR3 SDRAM module uses internally configured, 8-bank 1Gb DDR3 SDRAM devices. DDR3 SDRAM modules use double data rate architecture to achieve high-speed opera- tion ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 6 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each ...

Page 9

DRAM Operating Conditions Recommended AC operating conditions are given in the DDR3 component data sheets. Component specifications are available on Micron’s Web site. Module speed grades correlate with component speed grades, as shown in Table 8. Table 8: Module and ...

Page 10

I Specifications DD Table 9: DDR3 I Specifications and Conditions – 2GB DD Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter Operating current ...

Page 11

Temperature Sensor with Serial Presence-Detect EEPROM The temperature sensor continuously monitors the module’s temperature and can be read back at any time over the I Table 10: Temperature Sensor with Serial Presence-Detect EEPROM Operating Conditions Parameter/Condition Supply voltage Supply current: ...

Page 12

The interrupt mode enables software to reset EVENT# after a critical temperature threshold has been detected. Threshold points are set in the configuration register by the user. This mode triggers the critical temperature limit and both the MIN and MAX ...

Page 13

Table 12: Temperature Sensor Registers Name Pointer register Capability register Configuration register Alarm temperature upper boundary register Alarm temperature lower boundary register Critical temperature register Temperature register Pointer Register The pointer register selects which of the 16-bit registers is being ...

Page 14

Capability Register The capability register indicates the features and functionality supported by the temper- ature sensor. This register is a read-only register. Table 15: Capability Register (Address: 0x00 RFU RFU 7 6 RFU RFU Table 16: Capability Register ...

Page 15

Table 18: Configuration Register Bit Descriptions Bit Description 0 Event mode 0: Comparator mode 1: Interrupt mode 1 EVENT# polarity 0: Active LOW 1: Active HIGH 2 Critical event only 0: EVENT# trips on alarm or critical temperature event 1: ...

Page 16

Figure 4: Hysteresis Below window bit Above window bit Notes the value set in the alarm temperature lower boundary trip register Hyst is the value set in the hysteresis bits of the ...

Page 17

Temperature Format The temperature trip point registers and temperature readout register use a “2’s complement” format to enable negative numbers. The least significant bit (LSB) is equal to 0.0625°C or 0.25°C depending on which register is referenced example, ...

Page 18

Temperature Register The temperature register is a read-only register that provides the current temperature detected by the temperature sensor. The LSB for this register is 0.0625°C with a resolu- tion of 0.0625°C. The most significant bit (MSB) is 128°C in ...

Page 19

Module Dimensions Figure 5: 204-Pin DDR3 SODIMM 2.0 (0.079 (2X) 1.8 (0.071) (2X) U7 6.0 (0.236) TYP 2.0 (0.079) TYP U11 U17 2.55 (0.1) TYP Pin 204 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical ...

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