MT16JSF25664HZ Micron Semiconductor Products, MT16JSF25664HZ Datasheet

no-image

MT16JSF25664HZ

Manufacturer Part Number
MT16JSF25664HZ
Description
Ddr3 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR3 SDRAM SODIMM
MT16JSF25664HZ – 2GB
MT16JSF51264HZ – 4GB
Features
• DDR3 functionality and operations supported as
• 204-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC3- 12800, PC3-10600,
• 2GB (256 Meg x 64), 4GB (512 Meg x 64)
• V
• V
• Nominal and dynamic on-die termination (ODT) for
• Dual rank
• On-board I
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Table 1: Key Timing Parameters
PDF: 09005aef83364b70
jsf16c256_512x64hz.pdf - Rev. B 12/09
Speed
Grade
defined in the component data sheet
(SODIMM)
PC3-8500, or PC3-6400
data, strobe, and mask signals
serial presence-detect (SPD) EEPROM
via the mode register set (MRS)
-1G6
-1G4
-1G1
-1G0
-80C
-80B
DD
DDSPD
= 1.5V ±0.075V
= +3.0V to +3.6V
Nomenclature
PC3-12800
PC3-10600
2
Industry
PC3-8500
PC3-8500
PC3-6400
PC3-6400
C temperature sensor with integrated
Products and specifications discussed herein are subject to change by Micron without notice.
CL = 11 CL = 10
1600
1333
1333
2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM
CL = 9
1333
1333
Data Rate (MT/s)
CL = 8
1066
1066
1066
1066
1
Figure 1: 204-Pin SODIMM (MO-268 R/C F)
Module height: 30mm (1.18in)
Options
• Operating temperature
• Package
• Frequency/CAS latency
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– Halogen-free DIMM
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– 1.87ns @ CL = 8 (DDR3-1066)
– 2.5ns @ CL = 5 (DDR3-800)
– 2.5ns @ CL = 6 (DDR3-800)
CL = 7
1066
1066
1066
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. Not recommended for new designs.
CL = 6
module offerings.
800
800
800
800
800
800
CL = 5
667
667
667
667
800
667
1
A
A
≤ +85°C)
≤ +70°C)
© 2009 Micron Technology, Inc. All rights reserved.
13.125
13.125
13.125
t
(ns)
12.5
RCD
15
15
2
2
2
13.125
13.125
13.125
(ns)
12.5
t
15
15
RP
Features
Marking
None
-1G6
-1G4
-1G1
-1G0
-80C
-80B
48.125
49.125
50.625
Z
I
(ns)
52.5
52.5
t
50
RC

Related parts for MT16JSF25664HZ

MT16JSF25664HZ Summary of contents

Page 1

... DDR3 SDRAM SODIMM MT16JSF25664HZ – 2GB MT16JSF51264HZ – 4GB Features • DDR3 functionality and operations supported as defined in the component data sheet • 204-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC3- 12800, PC3-10600, PC3-8500, or PC3-6400 • 2GB (256 Meg x 64), 4GB (512 Meg x 64) • ...

Page 2

... The data sheet for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16JSF25664HZ-1G4D1. Table 4: Part Numbers and Timing Parameters – 4GB Modules 1 ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 204-Pin DDR3 SODIMM Front Pin Symbol Pin Symbol Pin DQ19 105 REFDQ 107 DQ0 57 DQ24 109 7 DQ1 59 DQ25 111 ...

Page 4

Table 6: Pin Descriptions Symbol Type Description A[14:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column ad- dress and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array ...

Page 5

Table 6: Pin Descriptions (Continued) Symbol Type Description V Supply Serial EEPROM positive power supply: +3.0V to +3.6V. The component V DDSPD are connected to the module Vdd. V Supply Reference voltage: Control, command, and address (V REFCA V Supply ...

Page 6

DQ Map Table 7: Component-to-Module DQ Map (Front) Component Reference Component Number DQ Module ...

Page 7

Table 8: Component-to-Module DQ Map (Back) Component Reference Component Number DQ Module DQ U11 U15 U17 ...

Page 8

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1# DQS1 DM1 DQ8 DQ DQ9 DQ DQ10 ...

Page 9

General Description DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory mod- ules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM mod- ules use DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture ...

Page 10

Table 10: Operating Conditions (Continued) Sym- bol Parameter I Input leakage current; I Any input 0V ≤ V ≤ input 0V ≤ V ≤ 0.95V V REF IN (All other pins not under test = 0V) I ...

Page 11

DRAM Operating Conditions Recommended AC operating conditions are given in the DDR3 component data sheets. Component specifications are available on Micron’s Web site. Module speed grades cor- relate with component speed grades, as shown below. Table 11: Module and Component ...

Page 12

I Specifications DD Table 12: DDR3 I Specifications and Conditions – 2GB DD Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter Operating current ...

Page 13

Table 13: DDR3 I Specifications and Conditions – 4GB (Continued) DD Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Precharge standby ODT current ...

Page 14

Temperature Sensor with Serial Presence-Detect EEPROM The temperature from the integrated thermal sensor is monitored and converts into a digital word via the I to create a custom temperature-sensing solution based on system requirements. Pro- gramming and configuration details comply ...

Page 15

Table 15: Sensor and EEPROM Serial Interface Timing (Continued) Parameter/Condition Start condition setup time Stop condition setup time EVENT# Pin The temperature sensor also adds the EVENT# pin (open drain). Not used by the SPD EEPROM, EVENT temperature ...

Page 16

Figure 3: EVENT# Pin Functionality Critical Alarm window (MAX) Alarm window (MIN) EVENT# interrupt mode EVENT# comparator mode EVENT# critical temperature only mode Table 16: Temperature Sensor Registers Name Pointer register Capability register Configuration register Alarm temperature upper boundary register ...

Page 17

Table 17: Pointer Register Bits 0– Table 18: Pointer Register Bits 0–2 Descriptions Capability Register The capability register indicates the features and functionality supported by the temper- ature sensor. ...

Page 18

Table 20: Capability Register Bit Description (Continued) Bit Description 4:3 Temperature resolution 00: 0.5°C LSB 01: 0.25°C LSB 10: 0.125°C LSB 11: 0.0625°C LSB 15:5 0: Must be set to zero Configuration Register Table 21: Configuration Register (Address: 0x01) 15 ...

Page 19

Table 22: Configuration Register Bit Descriptions (Continued) Bit Description 6 Alarm window lock bit 0: Alarm trips are not locked and can be changed 1: Alarm trips are locked and cannot be changed 7 Critical trip lock bit 0: Critical ...

Page 20

Figure 4: Hysteresis Applied to Temperature Around Trip Points Below window bit Above window bit 1. T Notes Hyst is the value set in the hysteresis bits of the configuration register. Table 23: Hysteresis Applied to Alarm ...

Page 21

Temperature Trip Point Registers The upper and lower temperature boundary registers are used to set the maximum and minimum values of the alarm window. LSB for these registers is 0.25°C. All RFU bits in the register will always report zero. ...

Page 22

Table 27: Temperature Register (Address: 0x05 Above Above Below MSB critical alarm alarm trip window window Table 28: Temperature Register Bit Descriptions Bit Description 13 Below alarm window 0: Temperature is equal to or above the lower ...

Page 23

Module Dimensions Figure 5: 204-Pin DDR3 SODIMM 2.0 (0.079) R (2X) 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.0 (0.079) TYP 2.55 (0.1) TYP 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. Notes: 2. The dimensional ...

Related keywords