MT16JSS51264HZ Micron Semiconductor Products, MT16JSS51264HZ Datasheet
MT16JSS51264HZ
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MT16JSS51264HZ Summary of contents
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... DDR3 SDRAM SODIMM MT16JSS51264HZ – 4GB Features • DDR3 functionality and operations supported as de- fined in the component data sheet • 204-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC3-10600, PC3-8500, or PC3-6400 • 4GB (512 Meg x 64) • 1.5V ± ...
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... The data sheet for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT16JSS51264HZ-1G1A1. PDF: 09005aef8384b3e9 jss16c512x64hz.pdf – Rev. B 8/09 EN ...
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Pin Assignments and Descriptions Table 4: Pin Assignments 204-Pin DDR3 SODIMM Front Pin Symbol Pin Symbol Pin DQ19 105 REFDQ 107 DQ0 57 DQ24 109 7 DQ1 59 DQ25 111 ...
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Table 5: Pin Descriptions Symbol Type Description A[14:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column ad- dress and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array ...
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Table 5: Pin Descriptions (Continued) Symbol Type Description V Supply Power supply: 1.5V ±0.075V. The component V DD ule V V Supply Temperature sensor/SPD EEPROM power supply: +3.0V to +3.6V. DDSPD V Supply Reference voltage: Control, command, and address (V ...
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DQ Map Table 6: Component-to-Module DQ Map Component Reference Component Number DQ Module ...
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Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1# DQS1 DM1 DM DQ8 DQ DQ9 ...
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General Description DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory mod- ules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM mod- ules use DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture ...
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Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device’s data ...
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Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers ...
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I Specifications DD Table 9: DDR3 I Specifications and Conditions – 4GB DD Values are for the MT41J512M8THU DDR3 SDRAM only and are computed from values specified in the 4Gb TwinDie (512 Meg x 8) component data sheet Parameter Operating ...
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Temperature Sensor with Serial Presence-Detect EEPROM The temperature from the integrated thermal sensor is monitored and converts into a digital word via the I to create a custom temperature-sensing solution based on system requirements. Pro- gramming and configuration details comply ...
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Table 11: Sensor and EEPROM Serial Interface Timing (Continued) Parameter/Condition Start condition setup time Stop condition setup time EVENT# Pin The temperature sensor also adds the EVENT# pin (open drain). Not used by the SPD EEPROM, EVENT temperature ...
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Figure 3: EVENT# Pin Functionality Critical Alarm window (MAX) Alarm window (MIN) EVENT# interrupt mode EVENT# comparator mode EVENT# critical temperature only mode Table 12: Temperature Sensor Registers Name Pointer register Capability register Configuration register Alarm temperature upper boundary register ...
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Table 13: Pointer Register Bits 0– Table 14: Pointer Register Bits 0–2 Descriptions Capability Register The capability register indicates the features and functionality supported by the temper- ature sensor. ...
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Table 16: Capability Register Bit Description (Continued) Bit Description 4:3 Temperature resolution 00: 0.5°C LSB 01: 0.25°C LSB 10: 0.125°C LSB 11: 0.0625°C LSB 15:5 0: Must be set to zero Configuration Register Table 17: Configuration Register (Address: 0x01) 15 ...
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Table 18: Configuration Register Bit Descriptions (Continued) Bit Description 6 Alarm window lock bit 0: Alarm trips are not locked and can be changed 1: Alarm trips are locked and cannot be changed 7 Critical trip lock bit 0: Critical ...
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Figure 4: Hysteresis Applied to Temperature Around Trip Points Below window bit Above window bit 1. T Notes Hyst is the value set in the hysteresis bits of the configuration register. Table 19: Hysteresis Applied to Alarm ...
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Temperature Trip Point Registers The upper and lower temperature boundary registers are used to set the maximum and minimum values of the alarm window. LSB for these registers is 0.25°C. All RFU bits in the register will always report zero. ...
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Table 23: Temperature Register (Address: 0x05 Above Above Below MSB critical alarm alarm trip window window Table 24: Temperature Register Bit Descriptions Bit Description 13 Below alarm window 0: Temperature is equal to or above the lower ...
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Module Dimensions Figure 5: 204-Pin DDR3 SODIMM 2.0 (0.079) R (2X) 1.80 (0.071) (2X) 6.0 (0.236) TYP 2.0 (0.079) TYP 0.6 (0.024) X 45° (4X) 2.55 (0.10) TYP Pin 204 1. All dimensions are in millimeters (inches); MAX/MIN or typical ...