CMF02 TOSHIBA Semiconductor CORPORATION, CMF02 Datasheet

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CMF02

Manufacturer Part Number
CMF02
Description
Toshiba Fast Recovery Diode Silicon Diffused Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Switching Mode Power Supply Applications
DC/DC Converter Applications
x
x
x
x
x
Absolute Maximum Ratings
 Note 3: This rating specifies the non-repetitive peak current in one cycle of a 50 Hz sine wave, condition angle 180q.
Repetitive peak reverse voltage: V
Average forward current: I
Forward voltage: V
Very fast reverse-recovery time: t
Suitable for compact assembly due to small surface-mount package
“MïFLAT
Repetitive peak reverse voltage
Average forward current
Peak one-cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Note 1: T 108°C
Note 2: Using continuously under heavy loads (e.g. the application of
Therefore the rating applies only to abnormal operation, which seldom occurs during the lifespan of a device.
Rectangular waveform (D
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TM
Characteristic
” (Toshiba package name)
FM
= 2.0 V (max)
TOSHIBA Fast Recovery Diode Silicon Diffused Type
F (AV)
= 1.0 A
rr
RRM
(Ta
= 100 ns (max.)
180°)
Symbol
I
V
F (AV)
I
T
FSM
RRM
= 600 V
T
stg
j
25°C)
CMF02

1.0 (Note 1)
10 (50 Hz)
40~150
40~150
(Note 3)
Rating
600
1
Unit
°C
°C
V
A
A
Weight: 0.023 g (typ.)
JEDEC
JEITA
TOSHIBA

3-4E1A
2007-04-16


CMF02
Unit: mm

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CMF02 Summary of contents

Page 1

... Therefore the rating applies only to abnormal operation, which seldom occurs during the lifespan of a device. CMF02 = 600 V = 100 ns (max.) (Ta 25°C)  Symbol Rating Unit V 600 V RRM I 1.0 (Note (AV) 10 (50 Hz FSM (Note 3) T °C 40~150 j T °C 40~150 stg 180°) 1 CMF02  Unit: mm JEDEC  JEITA  TOSHIBA 3-4E1A Weight: 0.023 g (typ.) 2007-04-16 ...

Page 2

... R th (j-a) (soldering land mm) (board thickness: 1.6 t) Device mounted on a glass-epoxy board (board size mm) (soldering land: 2 1.4 mm) (board thickness: 1 (j- Standard Soldering Pad x x 1.4 3.0 2 CMF02 Min Typ. Max Unit 2 100 270 ns ...

Page 3

... Device mounted on a ceramic board (board size × 50 mm, land size × 2 mm, board thickness: 0.64 t) 1 100 0.001 0.01 0.1 Time t (s) 3 CMF02 – (AV) 180° 120° 60° Rectangular waveform 0° 360° D Conduction angle D 0.6 0.8 1.0 1 ...

Page 4

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 CMF02 20070701-EN 2007-04-16 ...

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