SST200 Vishay, SST200 Datasheet

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SST200

Manufacturer Part Number
SST200
Description
N-channel Jfets
Manufacturer
Vishay
Datasheet
DESCRIPTION
The SST200/200A features low leakage, very low noise and
low cutoff voltage for use with low-level power supplies. The
SST200/200A is excellent for battery powered equipment and
low current amplifiers such as mini-microphones.
Document Number: 70976
S-20517—Rev. D, 15-Apr-02
PRODUCT SUMMARY
FEATURES
D Low Cutoff Voltage: <0.9 V
D High Input Impedance
D Very Low Noise
D High Gain: A
V
–0.3 to –0.9
GS(off)
(V)
V
V
= 80 @ 20 mA
(BR)GSS
D
S
*Marking Code for TO-236
–25
1
2
Min (V)
SST200 (P0)*
(SOT-23)
Top View
TO-236
g
fS
3
Min (mS)
0.25
BENEFITS
D High Quality Low-Level Signal
D Low Signal Loss/System Error
D High System Sensitivity
G
Amplification
N-Channel JFETs
New Product
I
DSS
Min (mA)
0.7
The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads)
packages, provide surface-mount capability and is available in
tape-and-reel for automated assembly.
For applications information see AN102 and AN106.
D
S
*Marking Code for SOT-323
1
2
(SC-70 3-LEADS)
SST200A (C)*
APPLICATIONS
D Mini-Microphones
D Hearing Aids
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
D Ultra High Input Impedance
Top View
SOT-323
Battery-Powered Amplifiers
Pre-Amplifiers
3
Vishay Siliconix
SST200/200A
G
www.vishay.com
6-1

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SST200 Summary of contents

Page 1

... D Very Low Noise D High Gain DESCRIPTION The SST200/200A features low leakage, very low noise and low cutoff voltage for use with low-level power supplies. The SST200/200A is excellent for battery powered equipment and low current amplifiers such as mini-microphones. TO-236 (SOT-23) ...

Page 2

... SST200/200A Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Lead Temperature ( / ” from case for 10 sec Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage b Saturation Drain Current Gate Reverse Current ...

Page 3

... V –0 Transconductance vs. Gate-Source Voltage 1 –0.7 V GS(off) 1 –55_C A 25_C 0.9 0.6 125_C 0 –0.1 –0.2 –0.3 V – Gate-Source Voltage (V) GS SST200/200A Vishay Siliconix Gate Leakage Current 500 100 125_C 125_C GSS I = 500 ...

Page 4

... SST200/200A Vishay Siliconix TYPICAL CHARACTERISTICS (T Circuit Voltage Gain vs. Drain Current 200 160 Assume 120 GS(off) –1 0.01 0.1 I – Drain Current (mA) D Common-Source Input Capacitance vs. Gate-Source Voltage MHz ...

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