CZT31C Central Semiconductor Corp., CZT31C Datasheet
CZT31C
Manufacturer Part Number
CZT31C
Description
Surface Mount 2.0w Complementary Silicon Power Transistors
Manufacturer
Central Semiconductor Corp.
Datasheet
1.CZT31C.pdf
(2 pages)
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Power Dissipation (T C =25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CES
I CEO
I EBO
BV CEO
* V CE(SAT)
* V BE(ON)
* h FE
* h FE
f T
* Pulsed, 2%D.C.
COMPLEMENTARY SILICON
SURFACE MOUNT 2.0W
POWER TRANSISTORS
SOT-223 CASE
CZT31C NPN
CZT32C PNP
TEST CONDITIONS
V CE =100V
V CE =60V
V EB =5.0V
I C =30mA
I C =3.0A, I B =375mA
V CE =4.0V, I C =3.0A
V CE =4.0V, I C =1.0A
V CE =4.0V, I C =3.0A
V CE =10V, I C =500mA, f=1.0MHz
SYMBOL
T J ,T stg
V CBO
V CEO
V EBO
Θ JC
I CM
Θ JA
P D
P D
I C
I B
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT31C and
CZT32C types are surface mount epoxy molded
complementary silicon transistors manufactured
by the epitaxial base process, designed for
surface mounted power amplifier applications up
to 3.0 amps.
MARKING CODE: FULL PART NUMBER
Semiconductor Corp.
MIN
100
25
10
3.0
-65 to +150
62.5
12.5
100
100
5.0
3.0
6.0
1.0
2.0
10
MAX
200
300
100
1.0
1.2
1.8
R3 (17-June 2004)
TM
UNITS
UNITS
°C/W
°C/W
MHz
°C
W
W
mA
V
V
V
A
A
A
µA
µA
V
V
V
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CZT31C Summary of contents
Page 1
... V CE =4.0V =3. =10V =500mA, f=1.0MHz * Pulsed, 2%D.C. Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps. ...
Page 2
... TM Semiconductor Corp. SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER CZT31C NPN CZT32C PNP SURFACE MOUNT 2.0W COMPLEMENTARY SILICON POWER TRANSISTORS DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0° 10° 0° 10° B 0.059 ...