CZT2000 Central Semiconductor Corp., CZT2000 Datasheet
CZT2000
Manufacturer Part Number
CZT2000
Description
Npn Silicon Extremely High Voltage Darlington Transistor
Manufacturer
Central Semiconductor Corp.
Datasheet
1.CZT2000.pdf
(2 pages)
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I EBO
BV CES
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(ON)
h FE
h FE
h FE
SILICON DARLINGTON TRANSISTOR
NPN EXTREMELY HIGH VOLTAGE
SURFACE MOUNT
TEST CONDITIONS
V CB =180V
V BE =10V
I C =1.0mA
I C =20mA, I B =25µA
I C =80mA, I B =40µA
I C =160mA, I B =100µA
V CE =5.0V, I C =160mA
V CE =5.0V, I C =100µA
V CE =5.0V, I C =10mA
V CE =5.0V, I C =160mA
SOT-223 CASE
CZT2000
SYMBOL
T J ,T stg
V CBO
V EBO
V CES
Θ JA
P D
I C
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2000
type is an NPN Epitaxial Planar Silicon
darlington transistor manufactured in an epoxy
molded surface mount package, designed for
applications requiring extremely high voltages
and high gain capability.
MARKING CODE: FULL PART NUMBER
Semiconductor Corp.
3000
3000
3000
MIN
200
-65 to +150
62.5
200
200
600
2.0
10
MAX
500
100
0.9
1.1
1.2
2.0
R5 (23-August 2004)
TM
UNITS
UNITS
°C/W
mA
°C
W
nA
nA
V
V
V
V
V
V
V
V
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CZT2000 Summary of contents
Page 1
... =5.0V =10mA =5.0V =160mA Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. ...
Page 2
... TM Semiconductor Corp. SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER CZT2000 SURFACE MOUNT NPN EXTREMELY HIGH VOLTAGE SILICON DARLINGTON TRANSISTOR DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0° 10° 0° 10° B 0.059 ...