CZTA46 Central Semiconductor Corp., CZTA46 Datasheet
CZTA46
Manufacturer Part Number
CZTA46
Description
Surface Mount Npn Silicon Extremely High Voltage Transistor
Manufacturer
Central Semiconductor Corp.
Datasheet
1.CZTA46.pdf
(2 pages)
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I EBO
B VCBO
B VCEO
B VEBO
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
f T
C ob
C ib
EXTREMELY HIGH VOLTAGE
SILICON TRANSISTOR
SURFACE MOUNT
SOT-223 CASE
CZTA46
TEST CONDITIONS
V CB =400V
V BE =4.0V
I C =100µA
I C =1.0mA
I E =10µA
I C =1.0mA, I B =0.1mA
I C =10mA, I B =1.0mA
I C =50mA, I B =5.0mA
I C =10mA, I B =1.0mA
V CE =10V, I C =1.0mA
V CE =10V, I C =10mA
V CE =10V, I C =50mA
V CE =10V, I C =100mA
V CE =10V, I C =10mA, f=10MHz
V CB =20V, I E =0, f=1.0MHz
V EB =0.5V, I C =0, f=1.0MHz
NPN
SYMBOL
V CBO
V CEO
V EBO
I C
P D
T J ,T stg
Θ JA
MIN
450
450
6.0
40
50
45
25
20
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA46 type
is a surface mount epoxy molded NPN silicon
planar
extremely high voltage applications.
MARKING CODE: FULL PART NUMBER
Semiconductor Corp.
-65 to +150
62.5
450
450
500
6.0
2.0
epitaxial
TYP
0.15
610
490
108
110
8.7
95
35
transistors
MAX
0.20
0.30
0.50
100
100
200
130
1.0
7.0
R3 (17-June 2004)
TM
designed
UNITS
UNITS
°C/W
MHz
mA
°C
W
nA
nA
pF
pF
V
V
V
V
V
V
V
V
V
V
for
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CZTA46 Summary of contents
Page 1
... V CE =10V =10mA, f=10MHz =20V =0, f=1.0MHz =0.5V =0, f=1.0MHz TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA46 type is a surface mount epoxy molded NPN silicon planar epitaxial transistors extremely high voltage applications. MARKING CODE: FULL PART NUMBER 450 450 6 ...
Page 2
... TM Semiconductor Corp. SOT-223 - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER CZTA46 SURFACE MOUNT NPN EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN A 0° 10° 0° B 0.059 0.071 1.50 C 0.018 --- 0.45 D 0.000 0.004 ...