2SD1620

Manufacturer Part Number2SD1620
DescriptionNpn Epitaxial Planar Silicon Transistor
ManufacturerSanyo Semiconductor Corporation
2SD1620 datasheet
 
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Ordering number:ENN1719B
Features
· Less power dissipation because of low V
permitting more flashes of light to be emitted.
· Large current capacity and highly resistant to break-
down.
· Excellent linearity of h
in the region from low
FE
current to high current.
· Ultrasmall size supports high-density, ultrasmall-
sized hybrid IC designs.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
P
a
a r
m
t e
r e
C
o
e l l
c
o t
- r
o t
B -
a
s
e
V
l o
a t
g
e
C
o
e l l
c
o t
- r
o t
E -
m
t t i
r e
V
l o
a t
g
e
E
m
t i
e t
- r
o t
B -
a
s
e
V
l o
a t
g
e
C
o
e l l
t c
r o
C
r u
e r
t n
C
o
e l l
t c
r o
C
r u
e r
t n
P (
u
s l
) e
C
o
e l l
t c
r o
i D
s s
p i
t a
o i
n
J
u
n
t c
o i
n
T
e
m
p
e
a r
u t
e r
S
o t
a r
g
e
T
e
m
p
e
a r
u t
e r
Electrical Characteristics at Ta = 25˚C
P
a
a r
m
t e
r e
C
o
e l l
t c
r o
C
u
o t
f f
C
r u
e r
t n
E
m
t t i
r e
C
u
o t
f f
C
r u
e r
t n
D
C
C
r u
e r
t n
G
a
n i
G
a
n i
B -
a
n
d
w
d i
h t
P
o r
d
u
t c
O
u
p t
t u
C
a
p
a
i c
a t
n
c
e
C
o
e l l
c
o t
- r
o t
E -
m
t t i
r e
S
t a
r u
t a
o i
n
V
l o
a t
g
e
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1.5V, 3V Strobe Applications
Package Dimensions
,
unit:mm
CE(sat)
2038A
0.4
S
y
m
b
l o
C
o
n
d
t i
o i
n
V
C
B
O
V
C
E
X
V
C
E
O
V
E
B
O
I C
I P
C
P C
M
o
u
n
e t
d
o
n
c
e
a r
m
c i
b
o
a
d r
2 (
5
0
m
j T
T
s
g t
S
y
m
b
l o
C
o
n
d
t i
o i
n
s
I
V B
=
2
0
V
I ,
E 0
=
C
B
O
C
I
V B
=
4
V
I ,
C 0
=
E
B
O
E
h E
V E
=
2
V
I ,
=
3
A
F
C
C
f T
V E
=
1
0
V
I ,
=
5
0
m
A
C
C
C
o
b
V B
=
1
0
, V
= f
1
M
H
z
C
V
I C
=
3
A
I ,
=
6
0
m
A
C
E
s (
a
) t
B
31005TN (PC)/21599TH (KT)/N1596TS (KOTO) 8-7707/5277KI/3045MW, TS No.1719–1/3
NPN Epitaxial Planar Silicon Transistor
2SD1620
[2SD1620]
4.5
1.5
1.6
0.5
2
3
1
0.4
1.5
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
s
R
t a
n i
g
s
3
2
1
5
0
m
2
0
8 .
m
m
)
1
1
5
5
5
o t
+
1
5
R
t a
n i
g
s
m
n i
y t
p
m
a
x
1
0
1
0
1
4
0
2
1
0
2
0
0
3
0
0
3 .
0
Continued on next page.
U
n
t i
0
V
0
V
0
V
6
V
3
A
5
A
0
m
W
3 .
W
0
˚C
0
˚C
U
n
t i
0
n
A
0
n
A
M
H
z
p
F
4 .
V

2SD1620 Summary of contents

  • Page 1

    ... 31005TN (PC)/21599TH (KT)/N1596TS (KOTO) 8-7707/5277KI/3045MW, TS No.1719–1/3 NPN Epitaxial Planar Silicon Transistor 2SD1620 [2SD1620] 4.5 1.5 1.6 0 0.4 1.5 3.0 0. Base 2 : Collector 3 : Emitter SANYO : PCP ...

  • Page 2

    ... Collector-to-Emitter Voltage – 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0 0.2 0.4 0.6 Base-to-Emitter Voltage – 1000 100 100 Collector Current – mA 2SD1620 µ ...

  • Page 3

    ... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. 2SD1620 1 =50 1.4 1.2 1 ...