2SD1622

Manufacturer Part Number2SD1622
DescriptionPnp/npn Epitaxial Planar Silicon Transistors
ManufacturerSanyo Semiconductor Corporation
2SD1622 datasheet
 
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Switching Time Test Circuit
PW=20 s
I B1
D.C. 1%
R B
INPUT
V R
I B2
50
+
100 F
--5V
I C =10I B1 = --10I B2 =500mA
(For PNP, the polarity is reversed.)
I C -- V CE
--1.0
2SB1122
--0.8
--0.6
--0.4
--0.2
0
0
--1
--2
Collector-to-Emitter Voltage, V CE – V
I C -- V BE
--1200
--1000
--800
--600
--400
--200
0
0
--0.2
--0.4
--0.6
Base-to-Emitter Voltage, V BE – V
2SB1122/2SD1622
S
y
m
b
l o
C
o
n
d
C b
V B
=
– (
1 )
0
, V
= f
1
M
H
z
o
C
V
I C
=
– (
5 )
0
0
m
A
I ,
=
– (
5 )
0
m
A
C
E
s (
a
) t
B
V
I C
=
– (
5 )
0
0
m
A
I ,
=
– (
5 )
0
m
A
B
E
s (
a
) t
B
V
I C
=
– (
1 )
0
µ
A
I ,
E 0
=
B (
R
)
C
B
O
V
I C
=
– (
1 )
m
, A
R
B =
B (
R
)
C
E
O
E
V
I E
=
– (
1 )
0
µ
A
I ,
C 0
=
B (
R
E )
B
O
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S
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s
p
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f i c
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f i c
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OUTPUT
R L
50
+
470 F
25V
1.0
0.8
0.6
0.4
0.2
I B =0
--3
--4
--5
ITR08877
1200
2SB1122
V CE = --2V
1000
800
600
400
200
--0.8
--1.0
--1.2
ITR08879
R
t a
n i
g
s
t i
o i
n
s
m
n i
y t
p
1 (
) 2
8
5 .
– (
1
8
) 0
1
2
0
– (
0 )
9 .
– (
6 )
0
– (
5 )
0
– (
5 )
4
0
4 (
) 0
3
5
0
3 (
0
) 0
3
0
3 (
) 0
I C -- V CE
2SD1622
0
0
1
2
3
Collector-to-Emitter Voltage, V CE – V
I C -- V BE
0
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, V BE – V
U
n
t i
m
a
x
p
F
p
F
– (
5
0
) 0
m
V
3
0
0
m
V
– (
1 )
2 .
V
V
V
V
n
s
n
s
n
s
n
s
n
s
n
s
I B =0
4
5
ITR08878
2SD1622
V CE =2V
1.0
1.2
ITR08880
No.2040–2/4