Silicon NPN Planar RF Transistor
Features
• Low noise figure
• High power gain
• Small collector capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Wide band, low noise, small signal amplifiers up to
UHF frquencies, high speed logic applications and
oscillator applications.
Mechanical Data
Typ: BFS17A
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: E2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFS17AR
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: E5
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFS17AW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WE2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
≤ 60 °C
Total power dissipation
T
amb
Junction temperature
Storage temperature range
Document Number 85039
Rev. 1.5, 29-Apr-05
BFS17A / BFS17AR / BFS17AW
1
e3
2
1
3
1
2
3
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Vishay Semiconductors
SOT-23
3
SOT-23
2
SOT-323
19150
Electrostatic sensitive device.
Observe precautions for handling.
Value
Unit
25
V
15
V
2.5
V
25
mA
200
mW
150
°C
- 65 to + 150
°C
www.vishay.com
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